Admittance spectroscopy of boron phosphide heterostructures grown by plasma enhanced chemical vapor deposition on silicon substrates

The study of BP layers and BP/n-Si heterojunctions formed by plasma enhanced chemical deposition on n-Si substrates has been carried out at a temperature of 350 °C using diborane and phosphine. The additional enhancement of hydrogen plasma power was established to make it possible to avoid pinning o...

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Bibliographic Details
Published in:St. Petersburg Polytechnical University Journal. Physics and Mathematics 2024-09, Vol.17 (3)
Main Authors: Baranov Artem, Vtorygin Georgii, Uvarov Alexander, Maksimova Alina, Vyacheslavova Ekaterina, Gudovskikh Alexander
Format: Article
Language:eng ; rus
Subjects:
admittance spectroscopy
boron phosphide
interface states
plasma enhanced chemical vapor deposition
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Summary:The study of BP layers and BP/n-Si heterojunctions formed by plasma enhanced chemical deposition on n-Si substrates has been carried out at a temperature of 350 °C using diborane and phosphine. The additional enhancement of hydrogen plasma power was established to make it possible to avoid pinning of the Fermi level at the BP/n-Si interface. Moreover, additional dilution with a hydrogen flow led to an increase in the BP layer conductivity, and the behavior of the current-voltage characteristic of the Au/BP/n-Si structure (golden electrode) became rectifying. Surface states of electrons at the BP/n-Si heterojunctions in all the samples and deep electronic levels with energy 0.58–0.65 eV in BP layers grown without the additional hydrogen flow were detected by admittance spectroscopy.
ISSN:2405-7223
DOI:10.18721/JPM.17302