DIODE PARAMETER DETERMINATION APPLIED TO LDD-MOSFETs FOR DEVICE CHARACTERIZATION

The electrical properties of the drain-substrate diode of MOSFETs are shown to be related to the device geometrical structure. The two dimensional analysis takes into account the edge effects of the length and width of the gate. Intrinsic parameters are extracted from current-voltage characteristics...

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Bibliographic Details
Published in:Active and Passive Electronic Components 1998, Vol.1998 (3), p.g157-163
Main Authors: DE LA BARDONNIE, M, MIALHE, P, BENDADA, E, BLAMPAIN, E, HOFFMANN, A, CHARLES, J.-P
Format: Article
Language:English
Subjects:
Applied sciences
current-voltage characteristics
drain-substrate diode
Electronics
Exact sciences and technology
intrinsic parameters
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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Description
Summary:The electrical properties of the drain-substrate diode of MOSFETs are shown to be related to the device geometrical structure. The two dimensional analysis takes into account the edge effects of the length and width of the gate. Intrinsic parameters are extracted from current-voltage characteristics and obtained dependent on these dimensions.
ISSN:0882-7516
1563-5031
DOI:10.1155/1998/54921