Surface Morphology-Dependent Functionality of Titanium Dioxide-Nickel Oxide Nanocomposite Semiconductors

In this study, TiO -NiO heterostructures were synthesized by combining hydrothermal and chemical bath deposition methods. The post-annealing temperature was varied to control the surface features of the TiO -NiO heterostructures. TiO -NiO heterostructures annealed at 350 °C comprised NiO-nanosheet-d...

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Bibliographic Details
Published in:Nanomaterials (Basel, Switzerland) Switzerland), 2019-11, Vol.9 (12), p.1651
Main Authors: Liang, Yuan-Chang, Xu, Nian-Cih, Chiang, Kai-Jen
Format: Article
Language:English
Subjects:
Acetone
Annealing
Chemical synthesis
Dyes
functionality
Gases
Glass substrates
Heterostructures
Investigations
Irradiation
Methylene blue
Morphology
Nanocomposites
Nanoparticles
Nanostructure
Nickel
Nickel oxides
Oxygen
Photodegradation
Radiation
Scanning electron microscopy
semconductors
Sensors
surface
Titanium dioxide
Vapors
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Summary:In this study, TiO -NiO heterostructures were synthesized by combining hydrothermal and chemical bath deposition methods. The post-annealing temperature was varied to control the surface features of the TiO -NiO heterostructures. TiO -NiO heterostructures annealed at 350 °C comprised NiO-nanosheet-decorated TiO nanostructures (NST), whereas those annealed at 500 °C comprised NiO-nanoparticle-decorated TiO nanostructures (NPT). The NPT exhibited higher photodegradation activity than the NST in terms of methylene blue (MB) degradation under irradiation. Structural analyses demonstrated that the NPT had a higher surface adsorption capability for MB dyes and superior light-harvesting ability; thus, they exhibited greater photodegradation ability toward MB dyes. In addition, the NST showed high gas-sensing responses compared with the NPT when exposed to acetone vapor. This result was attributable to the higher number of oxygen-deficient regions on the surfaces of the NST, which increased the amount of surface-chemisorbed oxygen species. This resulted in a relatively large resistance variation for the NST when exposed to acetone vapor.
ISSN:2079-4991
2079-4991
DOI:10.3390/nano9121651