CuOX thin films by direct oxidation of Cu films deposited by physical vapor deposition

Thin films of Cu2O and CuO oxides were developed by direct oxidation of physical vapor deposited copper films in an open atmosphere by varying the temperature in the range between 250 and 400 °C. In this work, the influence of oxidation temperature on structural, optical and electrical properties of...

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Bibliographic Details
Published in:Results in physics 2017, Vol.7, p.4140-4144
Main Authors: Santos-Cruz, D., Mayén-Hernández, S.A., de Moure-Flores, F., Campos-Álvarez, J., Pal, Mou, Santos-Cruz, J.
Format: Article
Language:English
Subjects:
Non-toxic material
Oxidizing annealed treatment
PVD
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Summary:Thin films of Cu2O and CuO oxides were developed by direct oxidation of physical vapor deposited copper films in an open atmosphere by varying the temperature in the range between 250 and 400 °C. In this work, the influence of oxidation temperature on structural, optical and electrical properties of copper oxide films has been discussed. The characterization results revealed that at lower temperatures (
ISSN:2211-3797
2211-3797
DOI:10.1016/j.rinp.2017.10.022