A low-cost and convenient route of fabricating GaN films with P-type mixed microcrystalline and amorphous structure deposited via Ga target of magnetron sputtering

• Published in: APL materials 2024-08, Vol.12 (8), p.081112-081112-9
• Main Authors: Chen, Xueqing, Li, Nan, Xing, Zerong, Zu, Jiasheng, Meng, Xianwei, Zhou, Zhuquan, Li, Qian, Tian, Lifeng, Cui, Yuntao, Liu, Jing
• Format: Article
• Language: English
• ISSN: 2166-532X
• DOI: 10.1063/5.0217625

GaN, a third-generation semiconductor, has gained widespread attention owing to its high temperature resistance, wide bandgap, and high critical breakdown electric fields. Magnetron sputtering has a broad potential in the field of low-cost growth of GaN on account of high efficiency, superior quality, and convenient operation. However, challenges caused from the pure Ga targets with a huge refrigeration system need to be resolved for wide practices. Here, a new and cost-effective Ga target for magnetron sputtering was fabricated by utilizing the wetting properties of CuGa2 and Ga. Mixed microcrystalline and amorphous GaN films were obtained via reactive magnetron sputtering employing the Ga target. The average deposition rate is about 1.68 nm/min, and the average roughness is ∼7.45 ± 0.26 nm under 100 W of sputtering power. In addition, the sputtered GaN films were found to be wide-bandgap and p-type semiconductors with high transmittance, as revealed by x-ray photoelectron spectroscopy and absorption spectra. The GaN films display a bandgap of ∼3.60 eV and a transmittance exceeding 88.5% in the visible range. Furthermore, field-effect transistors and metal–semiconductor–metal photodetectors have been fabricated using the obtained GaN films, demonstrating favorable response characteristics. The prospects of microcrystalline/amorphous GaN films in sensing, power devices, and flexible electronics were forecasted. Overall, a low-cost and pervasive route of target fabrication process expands the possibilities of using low melting point metals in magnetron sputtering.