Donor impurity energy and optical absorption in spherical sector quantum dots

• Published in: Heliyon 2020-01, Vol.6 (1), p.e03194-e03194, Article e03194
• Main Authors: Mora-Ramos, M.E., El Aouami, A., Feddi, E., Radu, A., Restrepo, R.L., Vinasco, J.A., Morales, A.L., Duque, C.A.
• Format: Article
• Language: English
• Subjects: Binding energy; Condensed Matter Physics; Donor impurity; Nanotechnology; Optical Absorption; Quantum dot
• ISSN: 2405-8440; 2405-8440
• DOI: 10.1016/j.heliyon.2020.e03194

The properties of the conduction band energy states of an electron interacting with a donor impurity center in spherical sector-shaped GaAs-Al0.3Ga0.7As quantum dots are theoretically investigated. The study is performed within the framework of the effective mass approximation through the numerical solution of the 3D Schrödinger equation for the envelope function via the finite element method. The modifications undergone by the spectrum due to the changes in the conical structure geometry (radius and apical angle) as well as in the position of the donor atom are discussed. With the information regarding electron states the linear optical absorption coefficient associated with transition between confined energy levels is evaluated and its features are discussed. The comparison of results obtained within the considered model with available experimental data in GaAs truncated-whisker-like quantum dots shows very good agreement. Besides, our simulation leads to identify the lowest energy photoluminescence peak as donor-related, instead of being associated to acceptor atoms, as claimed after experimental measurement (Hiruma et al. (1995) [14]). Also, a checking of our numerical approach is performed by comparing with analytical solutions to the problem of a spherical cone-shaped GaN with infinite confinement and donor impurity located at the cone apex. Coincidence is found to be remarkable. Condensed Matter Physics; Nanotechnology; Quantum dot; Donor impurity; Binding energy; Optical Absorption