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Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs

In recent years, the process requirements of nano-devices have led to the gradual reduction in the scale of semiconductor devices, and the consequent non-negligible sidewall defects caused by etching. Since plasma-enhanced chemical vapor deposition can no longer provide sufficient step coverage, the...

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Published in:Nanoscale research letters 2021-11, Vol.16 (1), p.164-164, Article 164
Main Authors: Yeh, Yen-Wei, Lin, Su-Hui, Hsu, Tsung-Chi, Lai, Shouqiang, Lee, Po-Tsung, Lien, Shui-Yang, Wuu, Dong-Sing, Li, Guisen, Chen, Zhong, Wu, Tingzhu, Kuo, Hao-Chung
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Language:English
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Summary:In recent years, the process requirements of nano-devices have led to the gradual reduction in the scale of semiconductor devices, and the consequent non-negligible sidewall defects caused by etching. Since plasma-enhanced chemical vapor deposition can no longer provide sufficient step coverage, the characteristics of atomic layer deposition ALD technology are used to solve this problem. ALD utilizes self-limiting interactions between the precursor gas and the substrate surface. When the reactive gas forms a single layer of chemical adsorbed on the substrate surface, no reaction occurs between them and the growth thickness can be controlled. At the Ă… level, it can provide good step coverage. In this study, recent research on the ALD passivation on micro-light-emitting diodes and vertical cavity surface emitting lasers was reviewed and compared. Several passivation methods were demonstrated to lead to enhanced light efficiency, reduced leakage, and improved reliability.
ISSN:1931-7573
1556-276X
1556-276X
DOI:10.1186/s11671-021-03623-x