SiOxCyHz-TiO2 Nanocomposite Films Prepared by a Novel PECVD-Sputtering Process

Recently, there has been growing interest in the incorporation of particles in plasma deposited thin films to creation of multifunctional surfaces. In this work a new hybrid methodology based on the plasma enhanced chemical vapor deposition (PECVD) of hexamethyldisiloxane combined to the reactive sp...

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Bibliographic Details
Published in:Materials research (São Carlos, São Paulo, Brazil) São Paulo, Brazil), 2021-01, Vol.24 (suppl 1), p.1
Main Authors: Oliveira, Lucas Pires Gomes, Ribeiro, Rafael Parra, Bortoleto, José Roberto Ribeiro, Cruz, Nilson Cristino, Rangel, Elidiane Cipriano
Format: Article
Language:English
Subjects:
Argon
Characterization
Chemical composition
Contact angle
ENGINEERING, CHEMICAL
Hexamethyldisiloxane
HMDSO
MATERIALS SCIENCE, MULTIDISCIPLINARY
METALLURGY & METALLURGICAL ENGINEERING
Morphology
Nanocomposites
Oxidation
Oxygen
Particulates
PECVD
Plasma
Plasma enhanced chemical vapor deposition
Sputtering
Surface roughness
Thin films
Titanium dioxide
Wettability
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Summary:Recently, there has been growing interest in the incorporation of particles in plasma deposited thin films to creation of multifunctional surfaces. In this work a new hybrid methodology based on the plasma enhanced chemical vapor deposition (PECVD) of hexamethyldisiloxane combined to the reactive sputtering of TiO2 is proposed for the preparation of SiOxCyHz-TiO2 composite films. Specifically, the effect of the proportion of O2 in the plasma environment on the morphology, chemical structure, elemental composition, wettability, thickness and surface roughness, of the films was studied. Agglomerates of TiO2 (16-83 μm) were detected into the organosilicon matrix with the concentration of particulates growing with the percentage of oxygen in the feed. In general, there was elevation in the angle of contact of the surfaces as the oxygen supply increased. Interpretation is proposed in terms of the influence of the oxygen supply on the TiO2 sputtering rate and in the oxidation of plasma species.
ISSN:1516-1439
1980-5373
1980-5373
DOI:10.1590/1980-5373-mr-2021-0058