A new mirroring circuit for power MOS current sensing highly immune to EMI

This paper deals with the monitoring of power transistor current subjected to radio-frequency interference. In particular, a new current sensor with no connection to the power transistor drain and with improved performance with respect to the existing current-sensing schemes is presented. The operat...

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Bibliographic Details
Published in:Sensors (Basel, Switzerland) Switzerland), 2013-01, Vol.13 (2), p.1856-1871
Main Authors: Aiello, Orazio, Fiori, Franco
Format: Article
Language:English
Subjects:
CMOS integrated circuit
current sensor
electromagnetic compatibility (EMC)
electromagnetic interference (EMI)
Integrated circuits
miller effect
Radio frequency
senseFET
Sensors
Simulation
smart power
Transistors
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Summary:This paper deals with the monitoring of power transistor current subjected to radio-frequency interference. In particular, a new current sensor with no connection to the power transistor drain and with improved performance with respect to the existing current-sensing schemes is presented. The operation of the above mentioned current sensor is discussed referring to time-domain computer simulations. The susceptibility of the proposed circuit to radio-frequency interference is evaluated through time-domain computer simulations and the results are compared with those obtained for a conventional integrated current sensor.
ISSN:1424-8220
1424-8220
DOI:10.3390/s130201856