Effects of Different Oxidation Degrees of Graphene Oxide on P-Type and N-Type Si Heterojunction Photodetectors

Oxygen-containing functional groups in graphene oxide (GO), a derivative of graphene, can widen the bandgap of graphene. In this study, we varied the amount of hydrogen peroxide used to prepare GO samples with different degrees of oxidation. Transmittance measurement, Raman spectroscopy, and X-ray p...

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Bibliographic Details
Published in:Nanomaterials (Basel, Switzerland) Switzerland), 2018-07, Vol.8 (7), p.491
Main Authors: Shih, Ching-Kuei, Ciou, Yu-Tang, Chiu, Chun-Wei, Li, Yu-Ru, Jheng, Jia-Syun, Chen, Yen-Chun, Lin, Chu-Hsuan
Format: Article
Language:English
Subjects:
graphene oxide
oxidation
photodetector
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Summary:Oxygen-containing functional groups in graphene oxide (GO), a derivative of graphene, can widen the bandgap of graphene. In this study, we varied the amount of hydrogen peroxide used to prepare GO samples with different degrees of oxidation. Transmittance measurement, Raman spectroscopy, and X-ray photoelectron spectroscopy were used to completely characterize the change in oxidation degree. The effects of oxidation degree on p-type and n-type Si heterojunction photodetectors were compared. Notably, GO with a lower oxidation degree led to a larger photoresponse of p-type Si, whereas that with a higher oxidation degree achieved a larger photoresponse of n-type Si.
ISSN:2079-4991
2079-4991
DOI:10.3390/nano8070491