Spin-defect characteristics of single sulfur vacancies in monolayer MoS2

Single spin-defects in 2D transition-metal dichalcogenides are natural spin-photon interfaces for quantum applications. Here we report high-field magneto-photoluminescence spectroscopy from three emission lines (Q1, Q2, and Q*) of He-ion induced sulfur vacancies in monolayer MoS 2 . Analysis of the...

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Bibliographic Details
Published in:NPJ 2D materials and applications 2023-04, Vol.7 (1), p.30-9, Article 30
Main Authors: Hötger, A., Amit, T., Klein, J., Barthelmi, K., Pelini, T., Delhomme, A., Rey, S., Potemski, M., Faugeras, C., Cohen, G., Hernangómez-Pérez, D., Taniguchi, T., Watanabe, K., Kastl, C., Finley, J. J., Refaely-Abramson, S., Holleitner, A. W., Stier, A. V.
Format: Article
Language:English
Subjects:
639/301/119
639/301/357
639/624
639/925
Brightening
Chemistry and Materials Science
Circular polarization
Condensed Matter
Crystals
Defects
Diamagnetism
Emission analysis
Emitters
Investigations
Ion beams
Materials Science
Mesoscopic Systems and Quantum Hall Effect
Molybdenum disulfide
Monolayers
Nanotechnology
Photoluminescence
Physics
Point defects
Reproducibility
Sulfur
Surfaces and Interfaces
Thin Films
Transition metal compounds
Valleys
Wave functions
Zeeman effect
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Summary:Single spin-defects in 2D transition-metal dichalcogenides are natural spin-photon interfaces for quantum applications. Here we report high-field magneto-photoluminescence spectroscopy from three emission lines (Q1, Q2, and Q*) of He-ion induced sulfur vacancies in monolayer MoS 2 . Analysis of the asymmetric PL lineshapes in combination with the diamagnetic shift of Q1 and Q2 yields a consistent picture of localized emitters with a wave function extent of ~3.5 nm. The distinct valley-Zeeman splitting in out-of-plane B -fields and the brightening of dark states through in-plane B -fields necessitates spin-valley selectivity of the defect states and lifted spin-degeneracy at zero field. Comparing our results to ab initio calculations identifies the nature of Q1 and Q2 and suggests that Q* is the emission from a chemically functionalized defect. Analysis of the optical degree of circular polarization reveals that the Fermi level is a parameter that enables the tunability of the emitter. These results show that defects in 2D semiconductors may be utilized for quantum technologies.
ISSN:2397-7132
2397-7132
DOI:10.1038/s41699-023-00392-2