Computational Study of Quenching Effects on Growth Processes and Size Distributions of Silicon Nanoparticles at a Thermal Plasma Tail

In this paper, quenching effects on silicon nanoparticle growth processes and size distributions at a typical range of cooling rates in a thermal plasma tail are investigated computationally. We used a nodal-type model that expresses a size distribution evolving temporally with simultaneous homogene...

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Bibliographic Details
Published in:Nanomaterials (Basel, Switzerland) Switzerland), 2021-05, Vol.11 (6), p.1370
Main Authors: Shigeta, Masaya, Hirayama, Yusuke, Ghedini, Emanuele
Format: Article
Language:English
Subjects:
Aerosols
Atmospheric pressure
Atoms & subatomic particles
Coagulation
Computer applications
Cooling rate
Fabrication
growth
Melting point
Melting points
multiscale modeling and simulation
Nanoparticles
Nucleation
Numerical analysis
Particle size
Plasma
Quenching
Scanning electron microscopy
Silicon
Size distribution
Thermal plasmas
Vapors
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Summary:In this paper, quenching effects on silicon nanoparticle growth processes and size distributions at a typical range of cooling rates in a thermal plasma tail are investigated computationally. We used a nodal-type model that expresses a size distribution evolving temporally with simultaneous homogeneous nucleation, heterogeneous condensation, interparticle coagulation, and melting point depression. The numerically obtained size distributions exhibit similar size ranges and tendencies to those of experiment results obtained with and without quenching. In a highly supersaturated state, 40–50% of the vapor atoms are converted rapidly to nanoparticles. After most vapor atoms are consumed, the nanoparticles grow by coagulation, which occurs much more slowly than condensation. At higher cooling rates, one obtains greater total number density, smaller size, and smaller standard deviation. Quenching in thermal plasma fabrication is effectual, but it presents limitations for controlling nanoparticle characteristics.
ISSN:2079-4991
2079-4991
DOI:10.3390/nano11061370