A Technology-Computer-Aided-Design-Based Reliability Prediction Model for DRAM Storage Capacitors

A full three-dimensional technology-computer-aided-design-based reliability prediction model was proposed for dynamic random-access memory (DRAM) storage capacitors. The model can be used to predict the time-dependent dielectric breakdown as well as leakage current of a state-of-the-art DRAM storage...

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Bibliographic Details
Published in:Micromachines (Basel) 2019-04, Vol.10 (4), p.256
Main Authors: Choi, Woo Young, Yoon, Gyuhan, Chung, Woo Young, Cho, Younghoon, Shin, Seongun, Ahn, Kwang Ho
Format: Article
Language:English
Subjects:
Bias
CAD
Capacitors
Computer aided design
Dielectric breakdown
Dynamic random access memory
dynamic random-access memory storage capacitor
Electric fields
Electrodes
Energy
Leakage current
Prediction models
Probability
Reliability
Simulation
technology-computer-aided design
time-dependent dielectric breakdown
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Summary:A full three-dimensional technology-computer-aided-design-based reliability prediction model was proposed for dynamic random-access memory (DRAM) storage capacitors. The model can be used to predict the time-dependent dielectric breakdown as well as leakage current of a state-of-the-art DRAM storage capacitor with a complex three-dimensional structure.
ISSN:2072-666X
2072-666X
DOI:10.3390/mi10040256