Fabrication and characteristics of flexible normally-off AlGaN/GaN HEMTs

In this paper, we present a method for removing a high electron mobility transistor (HEMT) silicon substrate using mechanical grinding and deep silicon etching technology and successfully transferred the epitaxial wafer to a PET substrate to achieve the flexible normally-off HEMT. By testing the out...

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Bibliographic Details
Published in:AIP advances 2020-10, Vol.10 (10), p.105317-105317-6
Main Authors: Lin, Runze, Zhao, Desheng, Yu, Guohao, Liu, Xiaoyan, Wu, Dongdong, Gu, Erdan, Cui, Xugao, Liu, Ran, Zhang, Baoshun, Tian, Pengfei
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Arrays
Gallium nitrides
High electron mobility transistors
Semiconductor devices
Silicon substrates
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Summary:In this paper, we present a method for removing a high electron mobility transistor (HEMT) silicon substrate using mechanical grinding and deep silicon etching technology and successfully transferred the epitaxial wafer to a PET substrate to achieve the flexible normally-off HEMT. By testing the output characteristics and transfer characteristics of the Si-substrate HEMT and PET-substrate HEMT, we have demonstrated that the PET-substrate HEMT has excellent performance and successfully achieved the mechanical flexibility. Furthermore, we analyzed the physical mechanisms of the change in PET-substrate and Si-substrate HEMT characteristics, as well as flexible HEMT performance under bent and flattened states. The flexible HEMT array demonstrates significant potential in integration with other flexible devices, such as GaN-based micro-LED arrays.
ISSN:2158-3226
2158-3226
DOI:10.1063/5.0025587