A ReRAM-Based Non-Volatile and Radiation-Hardened Latch Design

In aerospace environments, high reliability and low power consumption of chips are essential. To greatly reduce power consumption, the latches of a chip need to enter the power down operation. In this operation, employing non-volatile (NV) latches can retain circuit states. Moreover, a latch can be...

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Bibliographic Details
Published in:Micromachines (Basel) 2022-10, Vol.13 (11), p.1802
Main Authors: Yan, Aibin, Wei, Shaojie, Chen, Yu, Fan, Zhengzheng, Huang, Zhengfeng, Cui, Jie, Girard, Patrick, Wen, Xiaoqing
Format: Article
Language:English
Subjects:
Aerospace engineering
Aerospace environments
circuit reliability
Circuits
CMOS
Cosmic rays
Design
Electrodes
Energy conservation
Engineering Sciences
latch design
Latches
Micro and nanotechnologies
Microelectronics
non-volatile
Power consumption
Radiation
Radiation hardening
Random access memory
resistive random-access memory
Semiconductors
Single event upsets
single-event upset
Soft errors
State (computer science)
Transistors
Values
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Summary:In aerospace environments, high reliability and low power consumption of chips are essential. To greatly reduce power consumption, the latches of a chip need to enter the power down operation. In this operation, employing non-volatile (NV) latches can retain circuit states. Moreover, a latch can be hit by a radiative particle in the aerospace environment, which can cause a severe soft error in the worst case. This paper presents a NV-latch based on resistive random-access memories (ReRAMs) for NV and robust applications. The proposed NV-latch is radiation-hardened with low overhead and can restore values after power down operation. Simulation results demonstrate that the proposed NV-latch can completely provide radiation hardening capability against single-event upsets (SEUs) and can restore values after power down operation. The proposed NV-latch can reduce the number of transistors in the storage cells by 50% on average compared with the other similar solutions.
ISSN:2072-666X
2072-666X
DOI:10.3390/mi13111802