Development and Fabrication of AlGaInP-Based Flip-Chip Micro-LEDs

The fabrication of AlGaInP-based flip-chip micro light-emitting-diodes (LED; emitting area: 4.5 mil × 5 mil) with horizontal electrodes is reported in this paper. The thickness of the epitaxial layer of the thin LED structure was reduced to 50% of that of the traditional thick LED, whereas carrier c...

Full description

Saved in:
Bibliographic Details
Published in:IEEE journal of the Electron Devices Society 2018-01, Vol.6, p.475-479
Main Authors: Horng, Ray-Hua, Chien, Huan-Yu, Chen, Ken-Yen, Tseng, Wei-Yu, Tsai, Yu-Ting, Tarntair, Fu-Gow
Format: Article
Language:English
Subjects:
Aluminum gallium indium phosphides
Carrier density
Contact resistance
Current injection
Electrodes
Flip-chip
Gallium arsenide
Indium tin oxide
Light emitting diodes
Metals
micro-LED
Optoelectronics
Organic light emitting diodes
Power efficiency
Quantum efficiency
Quantum well devices
Substrates
Thickness
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The fabrication of AlGaInP-based flip-chip micro light-emitting-diodes (LED; emitting area: 4.5 mil × 5 mil) with horizontal electrodes is reported in this paper. The thickness of the epitaxial layer of the thin LED structure was reduced to 50% of that of the traditional thick LED, whereas carrier concentration in the n-type GaAs contact layer was increased to 5×10 18 cm -3 to meet the Ohmic contact requirement. At a current injection of 5 mA, the thin LED exhibited a forward voltage, output power, and external quantum efficiency of 1.8 V, 1.9 mW, and 19%, respectively. The optoelectronic performance of the thin LED was as good as that of the traditional thick red LED. The technique proposed by this paper can be used to integrate AlGaInP-based LEDs with nitride LEDs for full-color display applications.
ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2018.2823981