Berry curvature contributions of kagome-lattice fragments in amorphous Fe–Sn thin films

Amorphous semiconductors are widely applied to electronic and energy-conversion devices owing to their high performance and simple fabrication processes. The topological concept of the Berry curvature is generally ill-defined in amorphous solids, due to the absence of long-range crystalline order. H...

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Bibliographic Details
Published in:Nature communications 2023-06, Vol.14 (1), p.3399-3399, Article 3399
Main Authors: Fujiwara, Kohei, Kato, Yasuyuki, Abe, Hitoshi, Noguchi, Shun, Shiogai, Junichi, Niwa, Yasuhiro, Kumigashira, Hiroshi, Motome, Yukitoshi, Tsukazaki, Atsushi
Format: Article
Language:English
Subjects:
147/143
639/301/1005
639/301/119/544
639/301/357
639/766/119/1001
639/766/119/2792
Amorphous materials
Amorphous semiconductors
Crystals
Curvature
Electronic equipment
Energy conversion
Fabrication
Fragments
Fruits
Glass substrates
Humanities and Social Sciences
Magnetic properties
Metalloids
multidisciplinary
Science
Science (multidisciplinary)
Single crystals
Thin films
Topology
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Summary:Amorphous semiconductors are widely applied to electronic and energy-conversion devices owing to their high performance and simple fabrication processes. The topological concept of the Berry curvature is generally ill-defined in amorphous solids, due to the absence of long-range crystalline order. Here, we demonstrate that the Berry curvature in the short-range crystalline order of kagome-lattice fragments effectively contributes to the anomalous electrical and magneto-thermoelectric properties in Fe–Sn amorphous films. The Fe–Sn films on glass substrates exhibit large anomalous Hall and Nernst effects comparable to those of the single crystals of topological semimetals Fe 3 Sn 2 and Fe 3 Sn. With modelling, we reveal that the Berry curvature contribution in the amorphous state likely originates from randomly distributed kagome-lattice fragments. This microscopic interpretation sheds light on the topology of amorphous materials, which may lead to the realization of functional topological amorphous electronic devices. The topological character of solids is usually revealed by considering the Berry curvature of electronic bands in a periodic crystal. Here, authors demonstrate the influence of the Berry curvature on the electronic properties of an amorphous thin film.
ISSN:2041-1723
2041-1723
DOI:10.1038/s41467-023-39112-1