Compact Modeling of a 3.3 kV SiC MOSFET Power Module for Detailed Circuit-Level Electrothermal Simulations Including Parasitics

In this paper, an advanced electrothermal simulation strategy is applied to a 3.3 kV silicon carbide MOSFET power module. The approach is based on a full circuital representation of the module, where use is made of the thermal equivalent of the Ohm’s law. The individual transistors are described wit...

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Bibliographic Details
Published in:Energies (Basel) 2021-08, Vol.14 (15), p.4683
Main Authors: Scognamillo, Ciro, Catalano, Antonio Pio, Riccio, Michele, d’Alessandro, Vincenzo, Codecasa, Lorenzo, Borghese, Alessandro, Tripathi, Ravi Nath, Castellazzi, Alberto, Breglio, Giovanni, Irace, Andrea
Format: Article
Language:English
Subjects:
Aluminum
Behavior
Circuits
Design
Designers
electrothermal simulations
Investigations
MOSFETs
nonlinear thermal effects
Ohm's Law
parasitics
Power converters
power module
Silicon carbide
silicon carbide (SiC) MOSFETs
Simulation
SPICE modeling
Temperature effects
Transistors
Voltage converters (DC to DC)
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Summary:In this paper, an advanced electrothermal simulation strategy is applied to a 3.3 kV silicon carbide MOSFET power module. The approach is based on a full circuital representation of the module, where use is made of the thermal equivalent of the Ohm’s law. The individual transistors are described with subcircuits, while the dynamic power-temperature feedback is accounted for through an equivalent thermal network enriched with controlled sources enabling nonlinear thermal effects. A synchronous step-up DC-DC converter and a single-phase inverter, both incorporating the aforementioned power module, are simulated. Good accuracy was ensured by considering electromagnetic effects due to parasitics, which were experimentally extracted in a preliminary stage. Low CPU times are needed, and no convergence issues are encountered in spite of the high switching frequencies. The impact of some key parameters is effortlessly quantified. The analysis witnesses the efficiency and versatility of the approach, and suggests its adoption for design, analysis, and synthesis of high-frequency power converters in wide-band-gap semiconductor technology.
ISSN:1996-1073
1996-1073
DOI:10.3390/en14154683