Influence of Oxidation on Temperature-Dependent Photoluminescence Properties of Hydrogen-Terminated Silicon Nanocrystals

In this study, we investigate temperature-dependent photoluminescence (PL) in three samples of hydrogen-terminated silicon nanocrystals (ncSi-H) with different levels of surface oxidation.ncSi-H was oxidized by exposure to ambient air for 0 h, 24 h, or 48 h. The PL spectra as a function of temperatu...

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Bibliographic Details
Published in:Crystals (Basel) 2020-03, Vol.10 (3), p.143
Main Authors: Ghosh, Batu, Shirahata, Naoto
Format: Article
Language:English
Subjects:
cryostat
nanocrystals
oxidation
photoluminescence
quantum dots
silicon
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Summary:In this study, we investigate temperature-dependent photoluminescence (PL) in three samples of hydrogen-terminated silicon nanocrystals (ncSi-H) with different levels of surface oxidation.ncSi-H was oxidized by exposure to ambient air for 0 h, 24 h, or 48 h. The PL spectra as a function of temperature ranging between room temperature (~297 K) and 4 K are measured to elucidate the underlying physics of the PL spectra influenced by the surface oxidation of ncSi-H. There are striking differences in the evolution of PL spectra according to the surface oxidation level. The PL intensity increases as the temperature decreases. ForncSi-H with a smaller amount of oxide, the PL intensity is nearly saturated at 90 K. In contrast, the PL intensity decreases even below 90 K for the heavilyoxidized ncSi-H. For all the samples, full-width at half maxima (FWHM)decreases as the temperature decreases. The plots of the PL peak energy as a function of temperature can be reproduced with an equation where the average phonon energy and other parameters are calculated.
ISSN:2073-4352
2073-4352
DOI:10.3390/cryst10030143