Loading…

Chemical bath deposited CdTe thin film: Optical, electrical, and photoresponse aspects

Owning a narrow bandgap, remarkable optical and electrical properties with notable stability has made cadmium telluride (CdTe) an immensely vital semiconductor to develop cutting-edge optoelectronics. Taking these properties in to account, CdTe thin film is deposited employing the chemical bath depo...

Full description

Saved in:
Bibliographic Details
Published in:Next materials 2024-04, Vol.3, p.100152, Article 100152
Main Authors: Kachhia, Zalak S., Chaki, Sunil H., Patel, Sefali R., Tailor, Jiten P., Parekh, Zubin R., Deshpande, Milind P.
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites cdi_FETCH-LOGICAL-c2122-956072255bf05ce415587605f9dca86f3ef8c6fb0bdb5237af9e6a8be0f246223
container_end_page
container_issue
container_start_page 100152
container_title Next materials
container_volume 3
creator Kachhia, Zalak S.
Chaki, Sunil H.
Patel, Sefali R.
Tailor, Jiten P.
Parekh, Zubin R.
Deshpande, Milind P.
description Owning a narrow bandgap, remarkable optical and electrical properties with notable stability has made cadmium telluride (CdTe) an immensely vital semiconductor to develop cutting-edge optoelectronics. Taking these properties in to account, CdTe thin film is deposited employing the chemical bath deposition (CBD) technique. The X-ray diffraction analysis of the as-deposited thin film unveiled the composite crystalline structure, incorporating cubic, hexagonal, and tetragonal phases. The energy dispersive X-ray analysis and X-ray photoelectron spectroscopy ascertained the chemical composition of CdTe thin film. Distinctive Raman peaks are detected at 141 and 167 cm−1, signifying the presence of Cd-Te bond in the deposited thin film. The comprehensive evaluation of scanning electron micrographs emphasized the firm adhesion of the film to the substrate and displayed a uniform overlay of microstructures resembling rods. The observations from atomic force microscopy unveiled uniform grain structure with topographical features of hills and valleys. The UV-Visible spectroscopic examination elucidated that the as-deposited thin films exhibits a direct optical bandgap value of 1⋅59 eV. Temperature-dependent analysis of d.c. electrical resistivity exhibited a descending pattern, substantiating thin film's semiconducting attributes. The investigation into the photoresponse attributes of the thin film is accomplished by subjecting it to a polychromatic light, green and red monochromatic light source with an intensity of 50 mW/cm² employing three different biasing voltages. The thin film demonstrated maximum photocurrent for red light source than polychromatic and green light with maximum responsivity of 59⋅4 μA/W and detectivity of 17⋅7 × 106 Jones. These findings provide valuable insights on the photoresponse behavior of CBD deposited CdTe thin film in its as-deposited form.
doi_str_mv 10.1016/j.nxmate.2024.100152
format article
fullrecord <record><control><sourceid>elsevier_doaj_</sourceid><recordid>TN_cdi_doaj_primary_oai_doaj_org_article_7970c4cd38d9471da4c2f61aaee1098a</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S2949822824000492</els_id><doaj_id>oai_doaj_org_article_7970c4cd38d9471da4c2f61aaee1098a</doaj_id><sourcerecordid>S2949822824000492</sourcerecordid><originalsourceid>FETCH-LOGICAL-c2122-956072255bf05ce415587605f9dca86f3ef8c6fb0bdb5237af9e6a8be0f246223</originalsourceid><addsrcrecordid>eNp9kM1KxDAQgIsoKLpv4CEP4K7JbJI2HgRZ_APBy-o1TJOJm6XblqSIvr1dK-LJ0wzz8zHzFcW54AvBhb7cLtqPHQ60AA5yLHGh4KA4ASPNvAKoDv_kx8Us5y3nHIwRWoqT4nW1oV102LAahw3z1Hc5DuTZyq-JDZvYshCb3RV77of92AWjhtyQphxbz_pNN3SJct-1mRjmfmzns-IoYJNp9hNPi5e72_XqYf70fP-4unmaOxAAc6M0LwGUqgNXjqRQqio1V8F4h5UOSwqV06Hmta8VLEsMhjRWNfEAUgMsT4vHies73No-xR2mT9thtN-FLr1ZTOPhDdnSlNxJ55eVN7IUHqWDoAUikeCmwpElJ5ZLXc6Jwi9PcLtXbbd2Um33qu2kely7ntZo_PM9UrLZRWod-ZhGFeMh8X_AF8DpiNg</addsrcrecordid><sourcetype>Open Website</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Chemical bath deposited CdTe thin film: Optical, electrical, and photoresponse aspects</title><source>ScienceDirect Journals</source><creator>Kachhia, Zalak S. ; Chaki, Sunil H. ; Patel, Sefali R. ; Tailor, Jiten P. ; Parekh, Zubin R. ; Deshpande, Milind P.</creator><creatorcontrib>Kachhia, Zalak S. ; Chaki, Sunil H. ; Patel, Sefali R. ; Tailor, Jiten P. ; Parekh, Zubin R. ; Deshpande, Milind P.</creatorcontrib><description>Owning a narrow bandgap, remarkable optical and electrical properties with notable stability has made cadmium telluride (CdTe) an immensely vital semiconductor to develop cutting-edge optoelectronics. Taking these properties in to account, CdTe thin film is deposited employing the chemical bath deposition (CBD) technique. The X-ray diffraction analysis of the as-deposited thin film unveiled the composite crystalline structure, incorporating cubic, hexagonal, and tetragonal phases. The energy dispersive X-ray analysis and X-ray photoelectron spectroscopy ascertained the chemical composition of CdTe thin film. Distinctive Raman peaks are detected at 141 and 167 cm−1, signifying the presence of Cd-Te bond in the deposited thin film. The comprehensive evaluation of scanning electron micrographs emphasized the firm adhesion of the film to the substrate and displayed a uniform overlay of microstructures resembling rods. The observations from atomic force microscopy unveiled uniform grain structure with topographical features of hills and valleys. The UV-Visible spectroscopic examination elucidated that the as-deposited thin films exhibits a direct optical bandgap value of 1⋅59 eV. Temperature-dependent analysis of d.c. electrical resistivity exhibited a descending pattern, substantiating thin film's semiconducting attributes. The investigation into the photoresponse attributes of the thin film is accomplished by subjecting it to a polychromatic light, green and red monochromatic light source with an intensity of 50 mW/cm² employing three different biasing voltages. The thin film demonstrated maximum photocurrent for red light source than polychromatic and green light with maximum responsivity of 59⋅4 μA/W and detectivity of 17⋅7 × 106 Jones. These findings provide valuable insights on the photoresponse behavior of CBD deposited CdTe thin film in its as-deposited form.</description><identifier>ISSN: 2949-8228</identifier><identifier>EISSN: 2949-8228</identifier><identifier>DOI: 10.1016/j.nxmate.2024.100152</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><subject>Bandgap ; CdTe ; Chemical bath deposition ; Photoresponse ; Resistivity ; Thin film</subject><ispartof>Next materials, 2024-04, Vol.3, p.100152, Article 100152</ispartof><rights>2024 The Authors</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c2122-956072255bf05ce415587605f9dca86f3ef8c6fb0bdb5237af9e6a8be0f246223</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S2949822824000492$$EHTML$$P50$$Gelsevier$$Hfree_for_read</linktohtml><link.rule.ids>314,780,784,3549,27924,27925,45780</link.rule.ids></links><search><creatorcontrib>Kachhia, Zalak S.</creatorcontrib><creatorcontrib>Chaki, Sunil H.</creatorcontrib><creatorcontrib>Patel, Sefali R.</creatorcontrib><creatorcontrib>Tailor, Jiten P.</creatorcontrib><creatorcontrib>Parekh, Zubin R.</creatorcontrib><creatorcontrib>Deshpande, Milind P.</creatorcontrib><title>Chemical bath deposited CdTe thin film: Optical, electrical, and photoresponse aspects</title><title>Next materials</title><description>Owning a narrow bandgap, remarkable optical and electrical properties with notable stability has made cadmium telluride (CdTe) an immensely vital semiconductor to develop cutting-edge optoelectronics. Taking these properties in to account, CdTe thin film is deposited employing the chemical bath deposition (CBD) technique. The X-ray diffraction analysis of the as-deposited thin film unveiled the composite crystalline structure, incorporating cubic, hexagonal, and tetragonal phases. The energy dispersive X-ray analysis and X-ray photoelectron spectroscopy ascertained the chemical composition of CdTe thin film. Distinctive Raman peaks are detected at 141 and 167 cm−1, signifying the presence of Cd-Te bond in the deposited thin film. The comprehensive evaluation of scanning electron micrographs emphasized the firm adhesion of the film to the substrate and displayed a uniform overlay of microstructures resembling rods. The observations from atomic force microscopy unveiled uniform grain structure with topographical features of hills and valleys. The UV-Visible spectroscopic examination elucidated that the as-deposited thin films exhibits a direct optical bandgap value of 1⋅59 eV. Temperature-dependent analysis of d.c. electrical resistivity exhibited a descending pattern, substantiating thin film's semiconducting attributes. The investigation into the photoresponse attributes of the thin film is accomplished by subjecting it to a polychromatic light, green and red monochromatic light source with an intensity of 50 mW/cm² employing three different biasing voltages. The thin film demonstrated maximum photocurrent for red light source than polychromatic and green light with maximum responsivity of 59⋅4 μA/W and detectivity of 17⋅7 × 106 Jones. These findings provide valuable insights on the photoresponse behavior of CBD deposited CdTe thin film in its as-deposited form.</description><subject>Bandgap</subject><subject>CdTe</subject><subject>Chemical bath deposition</subject><subject>Photoresponse</subject><subject>Resistivity</subject><subject>Thin film</subject><issn>2949-8228</issn><issn>2949-8228</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>DOA</sourceid><recordid>eNp9kM1KxDAQgIsoKLpv4CEP4K7JbJI2HgRZ_APBy-o1TJOJm6XblqSIvr1dK-LJ0wzz8zHzFcW54AvBhb7cLtqPHQ60AA5yLHGh4KA4ASPNvAKoDv_kx8Us5y3nHIwRWoqT4nW1oV102LAahw3z1Hc5DuTZyq-JDZvYshCb3RV77of92AWjhtyQphxbz_pNN3SJct-1mRjmfmzns-IoYJNp9hNPi5e72_XqYf70fP-4unmaOxAAc6M0LwGUqgNXjqRQqio1V8F4h5UOSwqV06Hmta8VLEsMhjRWNfEAUgMsT4vHies73No-xR2mT9thtN-FLr1ZTOPhDdnSlNxJ55eVN7IUHqWDoAUikeCmwpElJ5ZLXc6Jwi9PcLtXbbd2Um33qu2kely7ntZo_PM9UrLZRWod-ZhGFeMh8X_AF8DpiNg</recordid><startdate>202404</startdate><enddate>202404</enddate><creator>Kachhia, Zalak S.</creator><creator>Chaki, Sunil H.</creator><creator>Patel, Sefali R.</creator><creator>Tailor, Jiten P.</creator><creator>Parekh, Zubin R.</creator><creator>Deshpande, Milind P.</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>6I.</scope><scope>AAFTH</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>DOA</scope></search><sort><creationdate>202404</creationdate><title>Chemical bath deposited CdTe thin film: Optical, electrical, and photoresponse aspects</title><author>Kachhia, Zalak S. ; Chaki, Sunil H. ; Patel, Sefali R. ; Tailor, Jiten P. ; Parekh, Zubin R. ; Deshpande, Milind P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2122-956072255bf05ce415587605f9dca86f3ef8c6fb0bdb5237af9e6a8be0f246223</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Bandgap</topic><topic>CdTe</topic><topic>Chemical bath deposition</topic><topic>Photoresponse</topic><topic>Resistivity</topic><topic>Thin film</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kachhia, Zalak S.</creatorcontrib><creatorcontrib>Chaki, Sunil H.</creatorcontrib><creatorcontrib>Patel, Sefali R.</creatorcontrib><creatorcontrib>Tailor, Jiten P.</creatorcontrib><creatorcontrib>Parekh, Zubin R.</creatorcontrib><creatorcontrib>Deshpande, Milind P.</creatorcontrib><collection>ScienceDirect Open Access Titles</collection><collection>Elsevier:ScienceDirect:Open Access</collection><collection>CrossRef</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>Next materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kachhia, Zalak S.</au><au>Chaki, Sunil H.</au><au>Patel, Sefali R.</au><au>Tailor, Jiten P.</au><au>Parekh, Zubin R.</au><au>Deshpande, Milind P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Chemical bath deposited CdTe thin film: Optical, electrical, and photoresponse aspects</atitle><jtitle>Next materials</jtitle><date>2024-04</date><risdate>2024</risdate><volume>3</volume><spage>100152</spage><pages>100152-</pages><artnum>100152</artnum><issn>2949-8228</issn><eissn>2949-8228</eissn><abstract>Owning a narrow bandgap, remarkable optical and electrical properties with notable stability has made cadmium telluride (CdTe) an immensely vital semiconductor to develop cutting-edge optoelectronics. Taking these properties in to account, CdTe thin film is deposited employing the chemical bath deposition (CBD) technique. The X-ray diffraction analysis of the as-deposited thin film unveiled the composite crystalline structure, incorporating cubic, hexagonal, and tetragonal phases. The energy dispersive X-ray analysis and X-ray photoelectron spectroscopy ascertained the chemical composition of CdTe thin film. Distinctive Raman peaks are detected at 141 and 167 cm−1, signifying the presence of Cd-Te bond in the deposited thin film. The comprehensive evaluation of scanning electron micrographs emphasized the firm adhesion of the film to the substrate and displayed a uniform overlay of microstructures resembling rods. The observations from atomic force microscopy unveiled uniform grain structure with topographical features of hills and valleys. The UV-Visible spectroscopic examination elucidated that the as-deposited thin films exhibits a direct optical bandgap value of 1⋅59 eV. Temperature-dependent analysis of d.c. electrical resistivity exhibited a descending pattern, substantiating thin film's semiconducting attributes. The investigation into the photoresponse attributes of the thin film is accomplished by subjecting it to a polychromatic light, green and red monochromatic light source with an intensity of 50 mW/cm² employing three different biasing voltages. The thin film demonstrated maximum photocurrent for red light source than polychromatic and green light with maximum responsivity of 59⋅4 μA/W and detectivity of 17⋅7 × 106 Jones. These findings provide valuable insights on the photoresponse behavior of CBD deposited CdTe thin film in its as-deposited form.</abstract><pub>Elsevier Ltd</pub><doi>10.1016/j.nxmate.2024.100152</doi><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 2949-8228
ispartof Next materials, 2024-04, Vol.3, p.100152, Article 100152
issn 2949-8228
2949-8228
language eng
recordid cdi_doaj_primary_oai_doaj_org_article_7970c4cd38d9471da4c2f61aaee1098a
source ScienceDirect Journals
subjects Bandgap
CdTe
Chemical bath deposition
Photoresponse
Resistivity
Thin film
title Chemical bath deposited CdTe thin film: Optical, electrical, and photoresponse aspects
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T15%3A40%3A15IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-elsevier_doaj_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Chemical%20bath%20deposited%20CdTe%20thin%20film:%20Optical,%20electrical,%20and%20photoresponse%20aspects&rft.jtitle=Next%20materials&rft.au=Kachhia,%20Zalak%20S.&rft.date=2024-04&rft.volume=3&rft.spage=100152&rft.pages=100152-&rft.artnum=100152&rft.issn=2949-8228&rft.eissn=2949-8228&rft_id=info:doi/10.1016/j.nxmate.2024.100152&rft_dat=%3Celsevier_doaj_%3ES2949822824000492%3C/elsevier_doaj_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c2122-956072255bf05ce415587605f9dca86f3ef8c6fb0bdb5237af9e6a8be0f246223%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true