Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel

• Published in: Sensors (Basel, Switzerland) Switzerland), 2023-09, Vol.23 (18), p.7977
• Main Authors: Vetrova, Natalia, Kuimov, Evgeny, Sinyakin, Vladimir, Meshkov, Sergey, Makeev, Mstislav, Shashurin, Vasiliy
• Format: Article
• Language: English
• Subjects: Approximation; Decomposition; Energy; hysteresis; mathematical modeling; Radiation; Radio frequency identification; resonant levels; resonant-tunneling structures; self-consistent potential; semiconductor epitaxial layers; Sensors
• ISSN: 1424-8220; 1424-8220
• DOI: 10.3390/s23187977

This paper presents an effective compact model of current transfer for the estimation of hysteresis parameters on the volt-ampere characteristics of resonant-tunneling diodes. In the framework of the compact model, the appearance of hysteresis is explained as a manifestation of internal bistability due to interelectronic interaction in the channel of the resonant-tunneling structure. Unlike the models based on the method of equivalent circuits, the interelectronic interaction in the compact model is taken into account using the concentration parameter. Model validation allowed us to confirm the high accuracy of the model not only at the initial section of the volt-ampere characteristics, but also at the hysteresis parameters traditionally predicted with low accuracy, namely the loop width (∆ < 0.5%) and contrast (∆ < 7%). Thus, it is concluded that the models are promising for integration into systems for synthesizing the electrical characteristics of resonant-tunneling diodes.