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Tailoring nano-heterogeneity to enhance magnetostriction in Goss grain-oriented Fe81Ga19 alloy thin sheets by aging treatment

The magnetostriction of Fe–Ga thin sheets can be significantly improved by secondary recrystallization, but the effect of the nano-heterogeneity on the magnetostriction of Fe–Ga thin sheets with preferred texture is still an open question. This paper studies the feasibility of tailoring nano-heterog...

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Bibliographic Details
Published in:Journal of materials research and technology 2024-05, Vol.30, p.9572-9580
Main Authors: Mi, Chengdong, He, Zhenghua, Liu, Jiande, Zhu, Xiaofei, Sha, Yuhui, Chen, Lijia, Zuo, Liang
Format: Article
Language:English
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Summary:The magnetostriction of Fe–Ga thin sheets can be significantly improved by secondary recrystallization, but the effect of the nano-heterogeneity on the magnetostriction of Fe–Ga thin sheets with preferred texture is still an open question. This paper studies the feasibility of tailoring nano-heterogeneity to enhance the magnetostriction of -oriented Fe–Ga thin sheets by aging treatment. The secondary recrystallization of Goss ({110} ) texture with magnetostriction of 220 ± 12 ppm is achieved in Fe81Ga19 thin sheets after annealing at 950 °C. The magnetostriction and magnetic properties exhibit nonlinear changes with the increase of aging temperature. A peak magnetostriction of 244 ± 5 ppm is obtained in Fe81Ga19 thin sheets after aging at 450 °C, about 11% more than that of Fe–Ga thin sheets after secondary recrystallization. The effect of aging treatment on the magnetostriction of Fe–Ga thin sheets depends on the characteristics of the nano-scale L60 phase and causes lattice distortion. The increase of the volume fraction of the nano-scale L60 phase at the aging temperature of 450 °C leads to a much larger distortion and enhancement of the magnetostriction. As the aging temperature is lower than 400 °C or higher than 550 °C, the decrease of volume fraction or the coarsening of L60 phases, respectively, results in the decrease in the distortion of the A2 matrix.
ISSN:2238-7854
DOI:10.1016/j.jmrt.2024.06.031