Analytical and Physical Investigation on Source Resistance in InxGa1−xAs Quantum-Well High-Electron-Mobility Transistors

• Published in: Micromachines (Basel) 2023-02, Vol.14 (2), p.439
• Main Authors: Yoo, Ji-Hoon, Lee, In-Geun, Tsutsumi, Takuya, Sugiyama, Hiroki, Matsuzaki, Hideaki, Lee, Jae-Hak, Kim, Dae-Hyun
• Format: Article
• Language: English
• Subjects: Boundary conditions; Communication; Contact resistance; Differential equations; Electrical resistivity; Electrodes; HEMT; High electron mobility transistors; Indium gallium arsenides; InxGa1−xAs; Mathematical models; Parameters; Quadratic equations; Quantum wells; Semiconductor devices; source resistance; TLM; Transistors
• ISSN: 2072-666X; 2072-666X
• DOI: 10.3390/mi14020439

We present a fully analytical model and physical investigation on the source resistance (RS) in InxGa1−xAs quantum-well high-electron mobility transistors based on a three-layer TLM system. The RS model in this work was derived by solving the coupled quadratic differential equations for each current component with appropriate boundary conditions, requiring only six physical and geometrical parameters, including ohmic contact resistivity (ρc), barrier tunneling resistivity (ρbarrier), sheet resistances of the cap and channel regions (Rsh_cap and Rsh_ch), side-recessed length (Lside) and gate-to-source length (Lgs). To extract each model parameter, we fabricated two different TLM structures, such as cap-TLM and recessed-TLM. The developed RS model in this work was in excellent agreement with the RS values measured from the two TLM devices and previously reported short-Lg HEMT devices. The findings in this work revealed that barrier tunneling resistivity already played a critical role in reducing the value of RS in state-of-the-art HEMTs. Unless the barrier tunneling resistivity is reduced considerably, innovative engineering on the ohmic contact characteristics and gate-to-source spacing would only marginally improve the device performance.