Loading…

Integrating an electrically active colloidal quantum dot photodiode with a graphene phototransistor

The realization of low-cost photodetectors with high sensitivity, high quantum efficiency, high gain and fast photoresponse in the visible and short-wave infrared remains one of the challenges in optoelectronics. Two classes of photodetectors that have been developed are photodiodes and phototransis...

Full description

Saved in:
Bibliographic Details
Published in:Nature communications 2016-06, Vol.7 (1), p.11954-11954, Article 11954
Main Authors: Nikitskiy, Ivan, Goossens, Stijn, Kufer, Dominik, Lasanta, Tania, Navickaite, Gabriele, Koppens, Frank H. L., Konstantatos, Gerasimos
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The realization of low-cost photodetectors with high sensitivity, high quantum efficiency, high gain and fast photoresponse in the visible and short-wave infrared remains one of the challenges in optoelectronics. Two classes of photodetectors that have been developed are photodiodes and phototransistors, each of them with specific drawbacks. Here we merge both types into a hybrid photodetector device by integrating a colloidal quantum dot photodiode atop a graphene phototransistor. Our hybrid detector overcomes the limitations of a phototransistor in terms of speed, quantum efficiency and linear dynamic range. We report quantum efficiencies in excess of 70%, gain of 10 5 and linear dynamic range of 110 dB and 3 dB bandwidth of 1.5 kHz. This constitutes a demonstration of an optoelectronically active device integrated directly atop graphene and paves the way towards a generation of flexible highly performing hybrid two-dimensional (2D)/0D optoelectronics. The combination of fast photo-response and high gain plays a pivotal role in photodetector devices. Here the authors combine a colloidal quantum dot photodiode with a graphene phototransistor to overcome the speed, quantum efficiency and linear dynamic range limitations of available phototransistors.
ISSN:2041-1723
2041-1723
DOI:10.1038/ncomms11954