Loading…

Modeling Electrolytically Top-Gated Graphene

We investigate doping of a single-layer graphene in the presence of electrolytic top gating. The interfacial phenomenon is modeled using a modified Poisson-Boltzmann equation for an aqueous solution of simple salt. We demonstrate both the sensitivity of graphene's doping levels to the salt conc...

Full description

Saved in:
Bibliographic Details
Published in:Nanoscale research letters 2010-01, Vol.5 (3), p.505-511
Main Authors: Mišković, Z. L, Upadhyaya, Nitin
Format: Article
Language:English
Subjects:
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 511
container_issue 3
container_start_page 505
container_title Nanoscale research letters
container_volume 5
creator Mišković, Z. L
Upadhyaya, Nitin
description We investigate doping of a single-layer graphene in the presence of electrolytic top gating. The interfacial phenomenon is modeled using a modified Poisson-Boltzmann equation for an aqueous solution of simple salt. We demonstrate both the sensitivity of graphene's doping levels to the salt concentration and the importance of quantum capacitance that arises due to the smallness of the Debye screening length in the electrolyte.
doi_str_mv 10.1186/1556-276X-5-505
format article
fullrecord <record><control><sourceid>proquest_doaj_</sourceid><recordid>TN_cdi_doaj_primary_oai_doaj_org_article_7efdc3d24ed34ef3862a723ad14c88e3</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><doaj_id>oai_doaj_org_article_7efdc3d24ed34ef3862a723ad14c88e3</doaj_id><sourcerecordid>1826158289</sourcerecordid><originalsourceid>FETCH-LOGICAL-b2052-940b25b06a0634cac5770f5888f3cb2e1b2718847eb38f580405fa80e7a6696e3</originalsourceid><addsrcrecordid>eNpVkD1PwzAQhi0E4ntmg44MBM52_JERKihIIAZAYrMuzqUEuXVx0qH_HkMBiems16-eOz2MHXE459zqC66ULoTRr4UqFKgNtvuXbOZ3JXlhlJE7bK_v3wFKA0Zvsx0B2gioxC47e4gNhW4-HV0H8kOKYTV0HkNYjZ7jopjgQM1oknDxRnM6YFsthp4Of-Y-e7m5fh7fFvePk7vx5X1RC1CiqEqohapBI2hZevTKGGiVtbaVvhbEa2G4taWhWtqcQwmqRQtkUOtKk9xnd2tuE_HdLVI3w7RyETv3HcQ0dZjymYGcobbxshElNbKkVlot0AiJDS-9tSQz62rNqrs4o8bTfEgY_kH___g4c18S3ZdEp1zWmiGna8gixY8l9YObdb2nEHBOcdk7boXmygpb5erxT3VZZ-rfol_luXCyLrQYHU5T17uXJwFcQqZIKYz8BDQCijE</addsrcrecordid><sourcetype>Open Website</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1826158289</pqid></control><display><type>article</type><title>Modeling Electrolytically Top-Gated Graphene</title><source>Publicly Available Content Database (Proquest) (PQ_SDU_P3)</source><source>IngentaConnect Journals</source><source>PubMed Central</source><creator>Mišković, Z. L ; Upadhyaya, Nitin</creator><creatorcontrib>Mišković, Z. L ; Upadhyaya, Nitin</creatorcontrib><description>We investigate doping of a single-layer graphene in the presence of electrolytic top gating. The interfacial phenomenon is modeled using a modified Poisson-Boltzmann equation for an aqueous solution of simple salt. We demonstrate both the sensitivity of graphene's doping levels to the salt concentration and the importance of quantum capacitance that arises due to the smallness of the Debye screening length in the electrolyte.</description><identifier>ISSN: 1931-7573</identifier><identifier>ISSN: 1556-276X</identifier><identifier>EISSN: 1556-276X</identifier><identifier>DOI: 10.1186/1556-276X-5-505</identifier><identifier>PMID: 20672092</identifier><language>eng</language><publisher>United States: New York : Springer-Verlag</publisher><subject>Electrolyte ; Gating ; Graphene ; Poisson-Boltzmann model ; Quantum capacitance</subject><ispartof>Nanoscale research letters, 2010-01, Vol.5 (3), p.505-511</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925,37013</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/20672092$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Mišković, Z. L</creatorcontrib><creatorcontrib>Upadhyaya, Nitin</creatorcontrib><title>Modeling Electrolytically Top-Gated Graphene</title><title>Nanoscale research letters</title><addtitle>Nanoscale Res Lett</addtitle><description>We investigate doping of a single-layer graphene in the presence of electrolytic top gating. The interfacial phenomenon is modeled using a modified Poisson-Boltzmann equation for an aqueous solution of simple salt. We demonstrate both the sensitivity of graphene's doping levels to the salt concentration and the importance of quantum capacitance that arises due to the smallness of the Debye screening length in the electrolyte.</description><subject>Electrolyte</subject><subject>Gating</subject><subject>Graphene</subject><subject>Poisson-Boltzmann model</subject><subject>Quantum capacitance</subject><issn>1931-7573</issn><issn>1556-276X</issn><issn>1556-276X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>DOA</sourceid><recordid>eNpVkD1PwzAQhi0E4ntmg44MBM52_JERKihIIAZAYrMuzqUEuXVx0qH_HkMBiems16-eOz2MHXE459zqC66ULoTRr4UqFKgNtvuXbOZ3JXlhlJE7bK_v3wFKA0Zvsx0B2gioxC47e4gNhW4-HV0H8kOKYTV0HkNYjZ7jopjgQM1oknDxRnM6YFsthp4Of-Y-e7m5fh7fFvePk7vx5X1RC1CiqEqohapBI2hZevTKGGiVtbaVvhbEa2G4taWhWtqcQwmqRQtkUOtKk9xnd2tuE_HdLVI3w7RyETv3HcQ0dZjymYGcobbxshElNbKkVlot0AiJDS-9tSQz62rNqrs4o8bTfEgY_kH___g4c18S3ZdEp1zWmiGna8gixY8l9YObdb2nEHBOcdk7boXmygpb5erxT3VZZ-rfol_luXCyLrQYHU5T17uXJwFcQqZIKYz8BDQCijE</recordid><startdate>20100107</startdate><enddate>20100107</enddate><creator>Mišković, Z. L</creator><creator>Upadhyaya, Nitin</creator><general>New York : Springer-Verlag</general><general>BioMed Central Ltd</general><general>SpringerOpen</general><scope>FBQ</scope><scope>NPM</scope><scope>7X8</scope><scope>DOA</scope></search><sort><creationdate>20100107</creationdate><title>Modeling Electrolytically Top-Gated Graphene</title><author>Mišković, Z. L ; Upadhyaya, Nitin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-b2052-940b25b06a0634cac5770f5888f3cb2e1b2718847eb38f580405fa80e7a6696e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Electrolyte</topic><topic>Gating</topic><topic>Graphene</topic><topic>Poisson-Boltzmann model</topic><topic>Quantum capacitance</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mišković, Z. L</creatorcontrib><creatorcontrib>Upadhyaya, Nitin</creatorcontrib><collection>AGRIS</collection><collection>PubMed</collection><collection>MEDLINE - Academic</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>Nanoscale research letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mišković, Z. L</au><au>Upadhyaya, Nitin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Modeling Electrolytically Top-Gated Graphene</atitle><jtitle>Nanoscale research letters</jtitle><addtitle>Nanoscale Res Lett</addtitle><date>2010-01-07</date><risdate>2010</risdate><volume>5</volume><issue>3</issue><spage>505</spage><epage>511</epage><pages>505-511</pages><issn>1931-7573</issn><issn>1556-276X</issn><eissn>1556-276X</eissn><abstract>We investigate doping of a single-layer graphene in the presence of electrolytic top gating. The interfacial phenomenon is modeled using a modified Poisson-Boltzmann equation for an aqueous solution of simple salt. We demonstrate both the sensitivity of graphene's doping levels to the salt concentration and the importance of quantum capacitance that arises due to the smallness of the Debye screening length in the electrolyte.</abstract><cop>United States</cop><pub>New York : Springer-Verlag</pub><pmid>20672092</pmid><doi>10.1186/1556-276X-5-505</doi><tpages>7</tpages><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 1931-7573
ispartof Nanoscale research letters, 2010-01, Vol.5 (3), p.505-511
issn 1931-7573
1556-276X
1556-276X
language eng
recordid cdi_doaj_primary_oai_doaj_org_article_7efdc3d24ed34ef3862a723ad14c88e3
source Publicly Available Content Database (Proquest) (PQ_SDU_P3); IngentaConnect Journals; PubMed Central
subjects Electrolyte
Gating
Graphene
Poisson-Boltzmann model
Quantum capacitance
title Modeling Electrolytically Top-Gated Graphene
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T13%3A20%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_doaj_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Modeling%20Electrolytically%20Top-Gated%20Graphene&rft.jtitle=Nanoscale%20research%20letters&rft.au=Mi%C5%A1kovi%C4%87,%20Z.%20L&rft.date=2010-01-07&rft.volume=5&rft.issue=3&rft.spage=505&rft.epage=511&rft.pages=505-511&rft.issn=1931-7573&rft.eissn=1556-276X&rft_id=info:doi/10.1186/1556-276X-5-505&rft_dat=%3Cproquest_doaj_%3E1826158289%3C/proquest_doaj_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-b2052-940b25b06a0634cac5770f5888f3cb2e1b2718847eb38f580405fa80e7a6696e3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1826158289&rft_id=info:pmid/20672092&rfr_iscdi=true