Integrated 64 pixel UV image sensor and readout in a silicon carbide CMOS technology

This work demonstrates the first on-chip UV optoelectronic integration in 4H-SiC CMOS, which includes an image sensor with 64 active pixels and a total of 1263 transistors on a 100 mm 2 chip. The reported image sensor offers serial digital, analog, and 2-bit ADC outputs and operates at 0.39 Hz with...

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Bibliographic Details
Published in:Microsystems & nanoengineering 2022-10, Vol.8 (1), p.114-114, Article 114
Main Authors: Romijn, Joost, Vollebregt, Sten, Middelburg, Luke M., Mansouri, Brahim El, van Zeijl, Henk W., May, Alexander, Erlbacher, Tobias, Leijtens, Johan, Zhang, Guoqi, Sarro, Pasqualina M.
Format: Article
Language:English
Subjects:
639/166/987
639/624/1075/1083
Astronomy
CMOS
Digital imaging
Engineering
Ion implantation
Maximum power
Microcontrollers
Optoelectronics
Photography
Pixels
Power consumption
Semiconductors
Sensors
Silicon carbide
Transistors
Ultraviolet photography
Zinc oxides
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Summary:This work demonstrates the first on-chip UV optoelectronic integration in 4H-SiC CMOS, which includes an image sensor with 64 active pixels and a total of 1263 transistors on a 100 mm 2 chip. The reported image sensor offers serial digital, analog, and 2-bit ADC outputs and operates at 0.39 Hz with a maximum power consumption of 60 μW, which are significant improvements over previous reports. UV optoelectronics have applications in flame detection, satellites, astronomy, UV photography, and healthcare. The complexity of this optoelectronic system paves the way for new applications such harsh environment microcontrollers.
ISSN:2055-7434
2096-1030
2055-7434
DOI:10.1038/s41378-022-00446-3