KPFM surface photovoltage measurement and numerical simulation

A method for the analysis of Kelvin probe force microscopy (KPFM) characterization of semiconductor devices is presented. It enables evaluation of the influence of defective surface layers. The model is validated by analysing experimental KPFM measurements on crystalline silicon samples of contact p...

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Bibliographic Details
Published in:EPJ Photovoltaics 2019, Vol.10, p.3
Main Authors: Marchat, Clément, Connolly, James P., Kleider, Jean-Paul, Alvarez, José, Koduvelikulathu, Lejo J., Puel, Jean Baptiste
Format: Article
Language:English
Subjects:
Condensed Matter
Contact potentials
Defects
Electric power
Engineering Sciences
Incident light
kpfm
Lasers
Light
Materials
Materials Science
Mathematical models
Micro and nanotechnologies
Microelectronics
Microscopy
modeling and band bending
Normal distribution
Optics
Photonic
Physics
Semiconductor devices
Semiconductor doping
Silicon wafers
spv
surface defects
Surface layers
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Summary:A method for the analysis of Kelvin probe force microscopy (KPFM) characterization of semiconductor devices is presented. It enables evaluation of the influence of defective surface layers. The model is validated by analysing experimental KPFM measurements on crystalline silicon samples of contact potential difference (V CPD ) in the dark and under illumination, and hence the surface photovoltage (SPV). It is shown that the model phenomenologically explains the observed KPFM measurements. It reproduces the magnitude of SPV characterization as a function of incident light power in terms of a defect density assuming Gaussian defect distribution in the semiconductor bandgap. This allows an estimation of defect densities in surface layers of semiconductors and therefore increased exploitation of KPFM data.
ISSN:2105-0716
2105-0716
DOI:10.1051/epjpv/2019002