High Gain and Broadband Absorption Graphene Photodetector Decorated with Bi2Te3 Nanowires

A graphene photodetector decorated with Bi2Te3 nanowires (NWs) with a high gain of up to 3 × 104 and wide bandwidth window (400–2200 nm) has been demonstrated. The photoconductive gain was improved by two orders of magnitude compared to the gain of a photodetector using a graphene/Bi2Te3 nanoplate j...

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Bibliographic Details
Published in:Nanomaterials (Basel, Switzerland) Switzerland), 2021-03, Vol.11 (3), p.755
Main Authors: Yoo, Tae Jin, Kim, Wan Sik, Chang, Kyoung Eun, Kim, Cihyun, Kwon, Min Gyu, Jo, Ji Young, Lee, Byoung Hun
Format: Article
Language:English
Subjects:
Bi2Te3 nanowires
Bismuth tellurides
Broadband
Chemical vapor deposition
chemical vapor deposition (CVD) graphene
Graphene
graphene photodetector
High gain
infrared photodetector
Light
Nanoparticles
Nanotechnology
Nanowires
photodetector
Photoelectric effect
Photoelectric emission
Photometers
Quantum dots
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Summary:A graphene photodetector decorated with Bi2Te3 nanowires (NWs) with a high gain of up to 3 × 104 and wide bandwidth window (400–2200 nm) has been demonstrated. The photoconductive gain was improved by two orders of magnitude compared to the gain of a photodetector using a graphene/Bi2Te3 nanoplate junction. Additionally, the position of photocurrent generation was investigated at the graphene/Bi2Te3 NWs junction. Eventually, with low bandgap Bi2Te3 NWs and a graphene junction, the photoresponsivity improved by 200% at 2200 nm (~0.09 mA/W).
ISSN:2079-4991
2079-4991
DOI:10.3390/nano11030755