Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide

HfO 2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices owing to its excellent electrical properties and compatibility with complementary metal oxide semiconductor technology based on mature fabrication processes such as atomic layer deposition. Oxygen vacancy (V o...

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Bibliographic Details
Published in:Nano convergence 2023-12, Vol.10 (1), p.55-55, Article 55
Main Authors: Lee, Jaewook, Yang, Kun, Kwon, Ju Young, Kim, Ji Eun, Han, Dong In, Lee, Dong Hyun, Yoon, Jung Ho, Park, Min Hyuk
Format: Article
Language:English
Subjects:
Atomic layer epitaxy
Chemical bonds
Chemistry and Materials Science
CMOS
Electric properties
Electrical properties
Endurance
Ferroelectric materials
Ferroelectricity
Hafnium oxide
HfO2
Integrated circuits
Material properties
Materials Science
Memory device
Memory devices
Metal oxides
Nanoscale Science and Technology
Nanotechnology
Nanotechnology and Microengineering
Oxygen
Polymorphism
Resistive switching
Review
Semiconductor
Semiconductor devices
Semiconductor research
Switching
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Summary:HfO 2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices owing to its excellent electrical properties and compatibility with complementary metal oxide semiconductor technology based on mature fabrication processes such as atomic layer deposition. Oxygen vacancy (V o ), which is the most frequently observed intrinsic defect in HfO 2 -based films, determines the physical/electrical properties and device performance. V o influences the polymorphism and the resulting ferroelectric properties of HfO 2 . Moreover, the switching speed and endurance of ferroelectric memories are strongly correlated to the V o concentration and redistribution. They also strongly influence the device-to-device and cycle-to-cycle variability of integrated circuits based on ferroelectric memories. The concentration, migration, and agglomeration of V o form the main mechanism behind the RS behavior observed in HfO 2 , suggesting that the device performance and reliability in terms of the operating voltage, switching speed, on/off ratio, analog conductance modulation, endurance, and retention are sensitive to V o . Therefore, the mechanism of V o formation and its effects on the chemical, physical, and electrical properties in ferroelectric and RS HfO 2 should be understood. This study comprehensively reviews the literature on V o in HfO 2 from the formation and influencing mechanism to material properties and device performance. This review contributes to the synergetic advances of current knowledge and technology in emerging HfO 2 -based semiconductor devices. Graphical Abstract
ISSN:2196-5404
2196-5404
DOI:10.1186/s40580-023-00403-4