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Spectroscopy of bulk and few-layer superconducting NbSe2 with van der Waals tunnel junctions
Tunnel junctions, an established platform for high resolution spectroscopy of superconductors, require defect-free insulating barriers; however, oxides, the most common barrier, can only grow on a limited selection of materials. We show that van der Waals tunnel barriers, fabricated by exfoliation a...
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Published in: | Nature communications 2018-02, Vol.9 (1), p.1-6, Article 598 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Tunnel junctions, an established platform for high resolution spectroscopy of superconductors, require defect-free insulating barriers; however, oxides, the most common barrier, can only grow on a limited selection of materials. We show that van der Waals tunnel barriers, fabricated by exfoliation and transfer of layered semiconductors, sustain stable currents with strong suppression of sub-gap tunneling. This allows us to measure the spectra of bulk (20 nm) and ultrathin (3- and 4-layer) NbSe
2
devices at 70 mK. These exhibit two distinct superconducting gaps, the larger of which decreases monotonically with thickness and critical temperature. The spectra are analyzed using a two-band model incorporating depairing. In the bulk, the smaller gap exhibits strong depairing in in-plane magnetic fields, consistent with high out-of-plane Fermi velocity. In the few-layer devices, the large gap exhibits negligible depairing, consistent with out-of-plane spin locking due to Ising spin–orbit coupling. In the 3-layer device, the large gap persists beyond the Pauli limit.
Ideal tunnel junctions require high-quality, defect-free insulating barriers. Here, the authors demonstrate that van der Waals tunnel barriers atop bulk and ultrathin superconducting NbSe
2
sustain a stable tunneling current and allow mapping of the spectral evolution of layered superconductors. |
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ISSN: | 2041-1723 2041-1723 |
DOI: | 10.1038/s41467-018-03000-w |