Numerical and Experimental Demonstration of a Silicon Nitride-Based Ring Resonator Structure for Refractive Index Sensing

In optical communication and sensing, silicon nitride (SiN) photonics plays a crucial role. By adeptly guiding and manipulating light on a silicon-based platform, it facilitates the creation of compact and highly efficient photonic devices. This, in turn, propels advancements in high-speed communica...

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Published in:Applied sciences 2024-07, Vol.14 (14), p.6082
Main Authors: Butt, Muhammad A., Kozłowski, Łukasz, Golas, Michał, Slowikowski, Mateusz, Filipiak, Maciej, Juchniewicz, Marcin, Bieniek-Kaczorek, Aleksandra, Dudek, Michał, Piramidowicz, Ryszard
Format: Article
Language:English
Subjects:
Design
Environmental monitoring
Equipment and supplies
Etching
Fiber optics
finite element method
Gallium arsenide
integrated photonics
Light
Nitrides
Photonics
R&D
reactive ion etching
refractive index sensor
Research & development
ring resonator
Semiconductors
Sensors
Silicon
Silicon nitride
Simulation
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Summary:In optical communication and sensing, silicon nitride (SiN) photonics plays a crucial role. By adeptly guiding and manipulating light on a silicon-based platform, it facilitates the creation of compact and highly efficient photonic devices. This, in turn, propels advancements in high-speed communication systems and enhances the sensitivity of optical sensors. This study presents a comprehensive exploration wherein we both numerically and experimentally display the efficacy of a SiN-based ring resonator designed for refractive index sensing applications. The device’s sensitivity, numerically estimated at approximately 110 nm/RIU, closely aligns with the experimental value of around 112.5 nm/RIU. The RR sensor’s Q factor and limit of detection (LOD) are 1.7154 × 104 and 7.99 × 10−4 RIU, respectively. These congruent results underscore the reliability of the two-dimensional finite element method (2D-FEM) as a valuable tool for accurately predicting and assessing the device’s performance before fabrication.
ISSN:2076-3417
2076-3417
DOI:10.3390/app14146082