Protocol for doping of an Sn-based two-dimensional perovskite semiconductor by incorporating SnI4 for field-effect transistors and thermoelectric devices

• Published in: STAR protocols 2022-12, Vol.3 (4), p.101876-101876, Article 101876
• Main Authors: Liu, Yu, Chen, Ping-An, Qiu, Xincan, Guo, Jing, Xia, Jiangnan, Wei, Huan, Xie, Haihong, Hou, Shijin, He, Mai, Wang, Xiao, Zeng, Zebing, Jiang, Lang, Liao, Lei, Hu, Yuanyuan
• Format: Article
• Language: English
• Subjects: Material sciences; Physics; Protocol
• ISSN: 2666-1667; 2666-1667
• DOI: 10.1016/j.xpro.2022.101876

Doping is an important technique for semiconductor materials, yet effective and controllable doping of organic-inorganic halide perovskites is still a challenge. Here, we present a protocol to dope 2D perovskite (PEA)2SnI4 by incorporating SnI4 in the precursor solutions. We detail steps for preparation of field-effect transistors (FETs) and thermoelectric devices (TEs) based on SnI4-doped (PEA)2SnI4 films. We further describe characterization via conductivity measurement using the four-point probe method, FETs performance, and TEs performance measurements. For complete details on the use and execution of this protocol, please refer to Liu et al. (2022).1 [Display omitted] •Detailed procedures for fabrication of Sn4+-doped PEA2SnI4 FETs and TEs•Conductivity measurement of doped-PEA2SnI4 films by four-point probe method•Characterization of the performance of doped-PEA2SnI4 FET devices•Characterization of the Seebeck coefficients and power factors of doped-PEA2SnI4 TEs Publisher’s note: Undertaking any experimental protocol requires adherence to local institutional guidelines for laboratory safety and ethics. Doping is an important technique for semiconductor materials, yet effective and controllable doping of organic-inorganic halide perovskites is still a challenge. Here, we present a protocol to dope 2D perovskite (PEA)2SnI4 by incorporating SnI4 in the precursor solutions. We detail steps for preparation of field-effect transistors (FETs) and thermoelectric devices (TEs) based on SnI4-doped (PEA)2SnI4 films. We further describe characterization via conductivity measurement using the four-point probe method, FETs performance, and TEs performance measurements.