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Threshold voltage instability and polyimide charging effects of LTPS TFTs for flexible displays
In this paper, we investigate the V th shift of p-type LTPS TFTs fabricated on a polyimide (PI) and glass substrate considering charging phenomena. The V th of the LTPS TFTs with a PI substrate positively shift after a bias temperature stress test. However, the V th with a glass substrate rarely cha...
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Published in: | Scientific reports 2021-04, Vol.11 (1), p.8387-8387, Article 8387 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | In this paper, we investigate the V
th
shift of p-type LTPS TFTs fabricated on a polyimide (PI) and glass substrate considering charging phenomena. The V
th
of the LTPS TFTs with a PI substrate positively shift after a bias temperature stress test. However, the V
th
with a glass substrate rarely changed even with increasing stress. Such a positive V
th
shift results from the negative charging of fluorine stemmed from the PI under the gate bias. In fact, the C–V characterization on the metal–insulator-metal capacitor reveals that charging at the SiO
2
/PI interface depends on the applied gate bias and the PI material, which agrees well with the TCAD simulation and SIMS analyses. As a result, the charging at the SiO
2
/PI interface contributes to the V
th
shift of the LTPS TFTs leading to image sticking. |
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ISSN: | 2045-2322 2045-2322 |
DOI: | 10.1038/s41598-021-87950-0 |