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Threshold voltage instability and polyimide charging effects of LTPS TFTs for flexible displays

In this paper, we investigate the V th shift of p-type LTPS TFTs fabricated on a polyimide (PI) and glass substrate considering charging phenomena. The V th of the LTPS TFTs with a PI substrate positively shift after a bias temperature stress test. However, the V th with a glass substrate rarely cha...

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Bibliographic Details
Published in:Scientific reports 2021-04, Vol.11 (1), p.8387-8387, Article 8387
Main Authors: Kim, Hyojung, Park, Jongwoo, Khim, Taeyoung, Bak, Sora, Song, Jangkun, Choi, Byoungdeog
Format: Article
Language:English
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Summary:In this paper, we investigate the V th shift of p-type LTPS TFTs fabricated on a polyimide (PI) and glass substrate considering charging phenomena. The V th of the LTPS TFTs with a PI substrate positively shift after a bias temperature stress test. However, the V th with a glass substrate rarely changed even with increasing stress. Such a positive V th shift results from the negative charging of fluorine stemmed from the PI under the gate bias. In fact, the C–V characterization on the metal–insulator-metal capacitor reveals that charging at the SiO 2 /PI interface depends on the applied gate bias and the PI material, which agrees well with the TCAD simulation and SIMS analyses. As a result, the charging at the SiO 2 /PI interface contributes to the V th shift of the LTPS TFTs leading to image sticking.
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-021-87950-0