Modulation above Pump Beam Energy in Photoreflectance

Photoreflectance is used for the characterisation of semiconductor samples, usually by sweeping the monochromatized probe beam within the energy range comprised between the highest value set up by the pump beam and the lowest absorption threshold of the sample. There is, however, no fundamental uppe...

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Published in:International journal of photoenergy 2017-01, Vol.2017 (2017), p.1-4
Main Author: Fuertes Marrón, D.
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Language:English
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Light
Sensors
Spectrum analysis
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cited_by cdi_FETCH-LOGICAL-c493t-f6937dd2992786e4ea1d9752c2b166f1a07a04d32a55af13055b046d4ef3f6683
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description Photoreflectance is used for the characterisation of semiconductor samples, usually by sweeping the monochromatized probe beam within the energy range comprised between the highest value set up by the pump beam and the lowest absorption threshold of the sample. There is, however, no fundamental upper limit for the probe beam other than the limited spectral content of the source and the responsivity of the detector. As long as the modulation mechanism behind photoreflectance does affect the complete electronic structure of the material under study, sweeping the probe beam towards higher energies from that of the pump source is equally effective in order to probe high-energy critical points. This fact, up to now largely overseen, is shown experimentally in this work. E1 and E0 + Δ0 critical points of bulk GaAs are unambiguously resolved using pump light of lower energy. This type of upstream modulation may widen further applications of the technique.
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fullrecord <record><control><sourceid>proquest_doaj_</sourceid><recordid>TN_cdi_doaj_primary_oai_doaj_org_article_8aaad03cb31447738189bf314f8695be</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><doaj_id>oai_doaj_org_article_8aaad03cb31447738189bf314f8695be</doaj_id><sourcerecordid>4323320491</sourcerecordid><originalsourceid>FETCH-LOGICAL-c493t-f6937dd2992786e4ea1d9752c2b166f1a07a04d32a55af13055b046d4ef3f6683</originalsourceid><addsrcrecordid>eNqFkUtLxDAUhYsoOKg711JwqXVy885SxRcoulBwF26bZKzMNGPaUfz3Rjvo0tXNDR8n55wUxT6QEwAhppSAmnJtOFC1UUxAalUJap438xmAVFLS5-1ir-_bmnCuODAtJ4W4i241x6GNXYl1fPflw2qxLM88LsqLzqfZZ9l25cNLHGLyYe6bAbvG7xZbAee931vPneLp8uLx_Lq6vb-6OT-9rRpu2FAFaZhyjhpDlZaeewRnlKANrUHKAEgUEu4YRSEwACNCZG_ScR9YkFKzneJm1HURX-0ytQtMnzZia38uYppZTEPbzL3ViOgIa2oGOZ1iGrSpQ16ClkbUPmsdjlrLFN9Wvh_sa1ylLtu3YCjlJJtUmToeqSbFvs-Rf18FYr97tt8923XPGT8a8Ze2c_jR_kcfjLTPjA_4R-ffohLYF_Jpg-A</addsrcrecordid><sourcetype>Open Website</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1922409277</pqid></control><display><type>article</type><title>Modulation above Pump Beam Energy in Photoreflectance</title><source>Wiley-Blackwell Open Access Collection</source><source>Publicly Available Content Database</source><creator>Fuertes Marrón, D.</creator><contributor>David, Christin</contributor><creatorcontrib>Fuertes Marrón, D. ; David, Christin</creatorcontrib><description>Photoreflectance is used for the characterisation of semiconductor samples, usually by sweeping the monochromatized probe beam within the energy range comprised between the highest value set up by the pump beam and the lowest absorption threshold of the sample. There is, however, no fundamental upper limit for the probe beam other than the limited spectral content of the source and the responsivity of the detector. As long as the modulation mechanism behind photoreflectance does affect the complete electronic structure of the material under study, sweeping the probe beam towards higher energies from that of the pump source is equally effective in order to probe high-energy critical points. This fact, up to now largely overseen, is shown experimentally in this work. E1 and E0 + Δ0 critical points of bulk GaAs are unambiguously resolved using pump light of lower energy. This type of upstream modulation may widen further applications of the technique.</description><identifier>ISSN: 1110-662X</identifier><identifier>EISSN: 1687-529X</identifier><identifier>DOI: 10.1155/2017/4894127</identifier><language>eng</language><publisher>Cairo, Egypt: Hindawi Publishing Corporation</publisher><subject>Light ; Sensors ; Spectrum analysis</subject><ispartof>International journal of photoenergy, 2017-01, Vol.2017 (2017), p.1-4</ispartof><rights>Copyright © 2017 D. Fuertes Marrón.</rights><rights>Copyright © 2017 D. Fuertes Marrón. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c493t-f6937dd2992786e4ea1d9752c2b166f1a07a04d32a55af13055b046d4ef3f6683</citedby><cites>FETCH-LOGICAL-c493t-f6937dd2992786e4ea1d9752c2b166f1a07a04d32a55af13055b046d4ef3f6683</cites><orcidid>0000-0002-9493-9902</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.proquest.com/docview/1922409277/fulltextPDF?pq-origsite=primo$$EPDF$$P50$$Gproquest$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.proquest.com/docview/1922409277?pq-origsite=primo$$EHTML$$P50$$Gproquest$$Hfree_for_read</linktohtml><link.rule.ids>314,780,784,25753,27924,27925,37012,44590,75126</link.rule.ids></links><search><contributor>David, Christin</contributor><creatorcontrib>Fuertes Marrón, D.</creatorcontrib><title>Modulation above Pump Beam Energy in Photoreflectance</title><title>International journal of photoenergy</title><description>Photoreflectance is used for the characterisation of semiconductor samples, usually by sweeping the monochromatized probe beam within the energy range comprised between the highest value set up by the pump beam and the lowest absorption threshold of the sample. There is, however, no fundamental upper limit for the probe beam other than the limited spectral content of the source and the responsivity of the detector. As long as the modulation mechanism behind photoreflectance does affect the complete electronic structure of the material under study, sweeping the probe beam towards higher energies from that of the pump source is equally effective in order to probe high-energy critical points. This fact, up to now largely overseen, is shown experimentally in this work. E1 and E0 + Δ0 critical points of bulk GaAs are unambiguously resolved using pump light of lower energy. This type of upstream modulation may widen further applications of the technique.</description><subject>Light</subject><subject>Sensors</subject><subject>Spectrum analysis</subject><issn>1110-662X</issn><issn>1687-529X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>PIMPY</sourceid><sourceid>DOA</sourceid><recordid>eNqFkUtLxDAUhYsoOKg711JwqXVy885SxRcoulBwF26bZKzMNGPaUfz3Rjvo0tXNDR8n55wUxT6QEwAhppSAmnJtOFC1UUxAalUJap438xmAVFLS5-1ir-_bmnCuODAtJ4W4i241x6GNXYl1fPflw2qxLM88LsqLzqfZZ9l25cNLHGLyYe6bAbvG7xZbAee931vPneLp8uLx_Lq6vb-6OT-9rRpu2FAFaZhyjhpDlZaeewRnlKANrUHKAEgUEu4YRSEwACNCZG_ScR9YkFKzneJm1HURX-0ytQtMnzZia38uYppZTEPbzL3ViOgIa2oGOZ1iGrSpQ16ClkbUPmsdjlrLFN9Wvh_sa1ylLtu3YCjlJJtUmToeqSbFvs-Rf18FYr97tt8923XPGT8a8Ze2c_jR_kcfjLTPjA_4R-ffohLYF_Jpg-A</recordid><startdate>20170101</startdate><enddate>20170101</enddate><creator>Fuertes Marrón, D.</creator><general>Hindawi Publishing Corporation</general><general>Hindawi</general><general>Hindawi Limited</general><scope>ADJCN</scope><scope>AHFXO</scope><scope>RHU</scope><scope>RHW</scope><scope>RHX</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7TB</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>CWDGH</scope><scope>D1I</scope><scope>DWQXO</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>KR7</scope><scope>L6V</scope><scope>L7M</scope><scope>M7S</scope><scope>PDBOC</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0002-9493-9902</orcidid></search><sort><creationdate>20170101</creationdate><title>Modulation above Pump Beam Energy in Photoreflectance</title><author>Fuertes Marrón, D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c493t-f6937dd2992786e4ea1d9752c2b166f1a07a04d32a55af13055b046d4ef3f6683</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Light</topic><topic>Sensors</topic><topic>Spectrum analysis</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fuertes Marrón, D.</creatorcontrib><collection>الدوريات العلمية والإحصائية - e-Marefa Academic and Statistical Periodicals</collection><collection>معرفة - المحتوى العربي الأكاديمي المتكامل - e-Marefa Academic Complete</collection><collection>Hindawi Publishing Complete</collection><collection>Hindawi Publishing Subscription Journals</collection><collection>Hindawi Publishing Open Access</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Mechanical &amp; Transportation Engineering Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science &amp; Engineering Collection</collection><collection>ProQuest Central (Alumni)</collection><collection>ProQuest Central</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Middle East &amp; Africa Database</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>https://resources.nclive.org/materials</collection><collection>Civil Engineering Abstracts</collection><collection>ProQuest Engineering Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Engineering Database</collection><collection>Materials Science Collection</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>Directory of Open Access Journals</collection><jtitle>International journal of photoenergy</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fuertes Marrón, D.</au><au>David, Christin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Modulation above Pump Beam Energy in Photoreflectance</atitle><jtitle>International journal of photoenergy</jtitle><date>2017-01-01</date><risdate>2017</risdate><volume>2017</volume><issue>2017</issue><spage>1</spage><epage>4</epage><pages>1-4</pages><issn>1110-662X</issn><eissn>1687-529X</eissn><abstract>Photoreflectance is used for the characterisation of semiconductor samples, usually by sweeping the monochromatized probe beam within the energy range comprised between the highest value set up by the pump beam and the lowest absorption threshold of the sample. There is, however, no fundamental upper limit for the probe beam other than the limited spectral content of the source and the responsivity of the detector. As long as the modulation mechanism behind photoreflectance does affect the complete electronic structure of the material under study, sweeping the probe beam towards higher energies from that of the pump source is equally effective in order to probe high-energy critical points. This fact, up to now largely overseen, is shown experimentally in this work. E1 and E0 + Δ0 critical points of bulk GaAs are unambiguously resolved using pump light of lower energy. This type of upstream modulation may widen further applications of the technique.</abstract><cop>Cairo, Egypt</cop><pub>Hindawi Publishing Corporation</pub><doi>10.1155/2017/4894127</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-9493-9902</orcidid><oa>free_for_read</oa></addata></record>
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issn 1110-662X
1687-529X
language eng
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subjects Light
Sensors
Spectrum analysis
title Modulation above Pump Beam Energy in Photoreflectance
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T01%3A14%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_doaj_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Modulation%20above%20Pump%20Beam%20Energy%20in%20Photoreflectance&rft.jtitle=International%20journal%20of%20photoenergy&rft.au=Fuertes%20Marr%C3%B3n,%20D.&rft.date=2017-01-01&rft.volume=2017&rft.issue=2017&rft.spage=1&rft.epage=4&rft.pages=1-4&rft.issn=1110-662X&rft.eissn=1687-529X&rft_id=info:doi/10.1155/2017/4894127&rft_dat=%3Cproquest_doaj_%3E4323320491%3C/proquest_doaj_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c493t-f6937dd2992786e4ea1d9752c2b166f1a07a04d32a55af13055b046d4ef3f6683%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1922409277&rft_id=info:pmid/&rfr_iscdi=true