Gain of TlBr/BrCl Quantum Dot Semiconductor Optical Amplifier

This work studies the thallium halogenide TlBr/BrCl quantum dot (QD) semiconductor structure and specifies its optical properties. This QD structure is poorly studied. High gain is obtained, with two peaks at 800 and 3000 nm. Doping is shown to increase the gain by one order. Then, TlBr QD semicondu...

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Bibliographic Details
Published in:Journal of electrical and computer engineering 2023-03, Vol.2023, p.1-7
Main Authors: Al-Nashy, Baqer O., Al-Mosawi, Buraq T. Sh, Oleiwi, Mushtaq Obaid, Al-Khursan, Amin H.
Format: Article
Language:English
Subjects:
Amplification
Energy
High gain
Light amplifiers
Optical properties
Quantum dots
Semiconductor optical amplifiers
Semiconductors
Thallium
Time series
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Summary:This work studies the thallium halogenide TlBr/BrCl quantum dot (QD) semiconductor structure and specifies its optical properties. This QD structure is poorly studied. High gain is obtained, with two peaks at 800 and 3000 nm. Doping is shown to increase the gain by one order. Then, TlBr QD semiconductor optical amplifier (SOA) characteristics are studied. High dB gain is shown mainly at the doped structure, which can be used in various inline applications.
ISSN:2090-0147
2090-0155
DOI:10.1155/2023/1941232