Influence of excitation nature on temperature attenuation of luminescence in ZnSe crystals

• Published in: Results in optics 2022-12, Vol.9, p.100286, Article 100286
• Main Authors: Degoda, Volodymyr, Doroshenko, Iryna, Kogut, Yana, Podust, Halyna, Pavlova, Natalya
• Format: Article
• Language: English
• Subjects: Electron and hole mechanisms of recombination luminescence; Photo- and X-ray luminescence; Temperature attenuation of luminescence
• ISSN: 2666-9501; 2666-9501
• DOI: 10.1016/j.rio.2022.100286

Experimental studies have shown that temperature attenuation of luminescence in undoped ZnSe crystals depends on the nature of the band-band excitation. It is determined that this attenuation differs from the attenuation at intracentric excitation of the 630 nm luminescence band. A comparative analysis of the results of the action of X-rays, N2 laser (337 nm) and LED-390 (390 nm) shows that the temperature dependence of luminescence depends on the density of generated free electron-hole pairs. The corresponding theoretical dependences for external luminescence attenuation and in the presence of simultaneous intracentric and external luminescence attenuation are obtained. Analysis of the shape of the curves of temperature luminescence attenuation shows that the increase in the excitation density increases the probability of radiative transitions from the excited state of the luminescence center in comparison with nonradiative transitions. This is confirmed by the lux-luminescent characteristics of X-ray and photoluminescence at different temperatures. It can be stated with high probability that the temperature position of the beginning of the temperature attenuation of luminescence is affected by forced transitions in the scintillation pulse.