Comprehensive magnetotransport characterization of two dimensional electron gas in AlGaN/GaN high electron mobility transistor structures leading to the assessment of interface roughness

Magnetotransport in two distinct AlGaN/GaN HEMT structures grown by Molecular Beam Epitaxy (MBE) on Fe-doped templates is investigated using Shubnikov de-Haas Oscillations in the temperature range of 1.8–6 K and multicarrier fitting in the temperature range of 1.8–300 K. The temperature dependence o...

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Bibliographic Details
Published in:AIP advances 2014-09, Vol.4 (9), p.097124-097124-10
Main Authors: Mishra, Manna Kumari, Sharma, Rajesh K., Manchanda, Rachna, Bag, Rajesh K., Thakur, Om Prakash, Muralidharan, Rangarajan
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
DEPOSITS
DOPED MATERIALS
ELECTRON GAS
ELECTRON MOBILITY
Electrons
Epitaxial growth
GALLIUM NITRIDES
High electron mobility transistors
Interface roughness
MAGNETIC FIELDS
MAGNETORESISTANCE
Magnetoresistivity
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
OSCILLATIONS
ROUGHNESS
SCATTERING
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE
TRANSISTORS
Transport
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Summary:Magnetotransport in two distinct AlGaN/GaN HEMT structures grown by Molecular Beam Epitaxy (MBE) on Fe-doped templates is investigated using Shubnikov de-Haas Oscillations in the temperature range of 1.8–6 K and multicarrier fitting in the temperature range of 1.8–300 K. The temperature dependence of the two dimensional electron gas mobility is extracted from simultaneous multicarrier fitting of transverse and longitudinal resistivity as a function of magnetic field and the data is utilized to estimate contribution of interface roughness to the mobility and the corresponding transport lifetime. The quantum scattering time obtained from the analysis of Shubnikov de Haas Oscillations in transverse magnetoresistance along with the transport lifetime time were used to estimate interface roughness amplitude and lateral correlation length. The results indicate that the insertion of AlN over layer deposited prior to the growth of GaN base layer on Fe doped GaN templates for forming HEMT structures reduced the parallel conduction but resulted in an increase in interface roughness.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4896192