A novel design of a silicon PIN diode for increasing the breakdown voltage

This paper presents a new structure consisting of a silicon PIN junction with high breakdown voltage and low dark current with two Guard rings. To achieve the optimal structure, the effect of the parameters on the breakdown voltage and the dark current of the device has been investigated and simulat...

Full description

Saved in:
Bibliographic Details
Published in:IET circuits, devices & systems devices & systems, 2022-09, Vol.16 (6), p.491-499
Main Authors: Rezaei, Farzaneh, Dehghan Nayeri, Fatemeh, Rezaeian, Adel
Format: Article
Language:English
Subjects:
amorphous semiconductors
Breakdown
Dark current
Design
Design parameters
Diodes
Electric fields
Electric potential
elemental semiconductors
Penetration depth
PIN diodes
p‐i‐n diodes
Sensors
Silicon
silicon radiation detectors
Thickness
Voltage
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper presents a new structure consisting of a silicon PIN junction with high breakdown voltage and low dark current with two Guard rings. To achieve the optimal structure, the effect of the parameters on the breakdown voltage and the dark current of the device has been investigated and simulated. The intrinsic thickness and impurity, the penetration depth of the active area and guard rings, location and number of guard rings, thickness, and distance between guard rings are the effective parameters of the device's breakdown voltage and dark current. In the proposed structure by placing two guard rings around the active area, the results show that an electric field is distributed at the edge of the active area between the guard rings, which leads to an increase of 292.62 V in breakdown voltage compared to the device without a guard ring.
ISSN:1751-858X
1751-8598
DOI:10.1049/cds2.12120