Exploring current conduction dynamics in multiferroic BiFeO3 thin films prepared via modified chemical solution method

• Published in: Scientific reports 2024-10, Vol.14 (1), p.25578-12, Article 25578
• Main Authors: Wani, Waseem Ahmad, Venkataraman, Harihara, Ramaswamy, Kannan
• Format: Article
• Language: English
• Subjects: 639/301; 639/4077; 639/766; Bismuth ferrite; Chemical solution deposition; Conduction; Humanities and Social Sciences; Leakage current; multidisciplinary; Photoelectron spectroscopy; Science; Science (multidisciplinary); Space charge limited current; Thin films; Voltage
• ISSN: 2045-2322; 2045-2322
• DOI: 10.1038/s41598-024-76458-y

The current study describes current conduction mechanisms in BiFeO 3 thin films prepared by using a modified chemical solution-based technique. In particular, in these films, X-ray photoelectron spectroscopy revealed that the defect causing Fe 2+ ions reduced by about 18% compared to the solution-based synthesis methods reported before, indicating better film quality. The leakage current density was measured to be 1.7 × 10 –6  A/cm 2 at an applied voltage of 1.5 V, which is one order of magnitude less than the previously reported work in a similar system. Oxygen annealing was found to be effective in further reducing the current conduction, making these films a suitable choice for device applications. The current–voltage curves exhibited three different behaviours of current conduction mechanisms in these films. In particular, when the applied electric field was increased, a transition from Ohmic conduction to trap-filled space charge limited conduction was observed. The presented investigations demonstrate the importance of deposition methods in determining the suitability of thin films for device applications.