Layers of Metal Nanoparticles on Semiconductors Deposited by Electrophoresis from Solutions with Reverse Micelles

Pd nanoparticles were prepared with reverse micelles of water/AOT/isooctane solution and deposited onto silicon or InP substrates by electrophoresis. A large change of capacitance-voltage characteristics of mercury contacts on a semiconductor was found after Pd deposition. This change could be modif...

Full description

Saved in:
Bibliographic Details
Published in:Nanoscale research letters 2007-08, Vol.2 (9), p.450-454
Main Authors: Zdansky, K, Kacerovsky, P, Zavadil, J, Lorincik, J, Fojtik, A
Format: Article
Language:English
Subjects:
Electrophoresis
InP
Nanoparticles
Schottky barrier
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Pd nanoparticles were prepared with reverse micelles of water/AOT/isooctane solution and deposited onto silicon or InP substrates by electrophoresis. A large change of capacitance-voltage characteristics of mercury contacts on a semiconductor was found after Pd deposition. This change could be modified when the Pd deposition is followed by a partial removal of the deposited AOT. The deposited Pd nanoparticles were investigated by optical mictroscopy, SIMS and SEM. Finally, Schottky diodes with barrier height as high as 1.07 eV were prepared by deposition of Pd nanoparticles on n-type InP and by a partial removal of superfluous AOT. These diodes are prospective structures for further testing as hydrogen sensors.
ISSN:1556-276X
1931-7573
1556-276X
DOI:10.1186/1556-276X-2-450