Exploring Strategies to Contact 3D Nano-Pillars

This contribution explores different strategies to electrically contact vertical pillars with diameters less than 100 nm. Two process strategies have been defined, the first based on Atomic Force Microscope (AFM) indentation and the second based on planarization and reactive ion etching (RIE). We ha...

Full description

Saved in:
Bibliographic Details
Published in:Nanomaterials (Basel, Switzerland) Switzerland), 2020-04, Vol.10 (4), p.716
Main Authors: Amat, Esteve, Del Moral, Alberto, Fernández-Regúlez, Marta, Evangelio, Laura, Lorenzoni, Matteo, Gharbi, Ahmed, Rademaker, Guido, Pourteau, Marie-Line, Tiron, Raluca, Bausells, Joan, Perez-Murano, Francesc
Format: Article
Language:English
Subjects:
AFM
Annealing
Atomic force microscopes
Atomic force microscopy
Chemical-mechanical polishing
Electric contacts
Etching
HSQ
Indentation
Integrated circuits
Manufacturing
Manufacturing industry
nano-indentation
Nanocrystals
Nanowires
Quantum dots
Reactive ion etching
Transistors
vertical pillars
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This contribution explores different strategies to electrically contact vertical pillars with diameters less than 100 nm. Two process strategies have been defined, the first based on Atomic Force Microscope (AFM) indentation and the second based on planarization and reactive ion etching (RIE). We have demonstrated that both proposals provide suitable contacts. The results help to conclude that the most feasible strategy to be implementable is the one using planarization and reactive ion etching since it is more suitable for parallel and/or high-volume manufacturing processing.
ISSN:2079-4991
2079-4991
DOI:10.3390/nano10040716