Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: a study by high-resolution STM and in situ RHEED

The Si(001) surface deoxidized by short annealing at T ~ 925°C in the ultrahigh vacuum molecuar beam epitaxy chamber has been in situ investigated using high-resolution scanning tunneling microscopy (STM)and redegreesected high-energy electron diffraction (RHEED. RHEED patterns corresponding to (2 ×...

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Bibliographic Details
Published in:Nanoscale research letters 2011-03, Vol.6 (1), p.218-218, Article 218
Main Authors: Arapkina, Larisa V, Yuryev, Vladimir A, Chizh, Kirill V, Shevlyuga, Vladimir M, Storojevyh, Mikhail S, Krylova, Lyudmila A
Format: Article
Language:English
Subjects:
Chemistry and Materials Science
Clean surface preparation
Ge based materials
Materials Science
Molecular Medicine
Nano Express
Nanochemistry
Nanoscale Science and Technology
Nanotechnology
Nanotechnology and Microengineering
Reflected high energy electron diffraction
Scanning tunnelling microscopy
Silicon
Surface reconstruction
Symposium E : Nanoscaled Si
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Summary:The Si(001) surface deoxidized by short annealing at T ~ 925°C in the ultrahigh vacuum molecuar beam epitaxy chamber has been in situ investigated using high-resolution scanning tunneling microscopy (STM)and redegreesected high-energy electron diffraction (RHEED. RHEED patterns corresponding to (2 × 1) and (4 × 4) structures were observed during sample treatment. The (4 × 4) reconstruction arose at T ≲ 600°C after annealing. The reconstruction was observed to be reversible: the (4 × 4) structure turned into the (2 × 1) one at T ≳ 600°C, the (4 × 4) structure appeared again at recurring cooling. The c (8 × 8) reconstruction was revealed by STM at room temperature on the same samples. A fraction of the surface area covered by the c (8 × 8) structure decreased, as the sample cooling rate was reduced. The (2 × 1) structure was observed on the surface free of the c (8 × 8) one. The c (8 × 8) structure has been evidenced to manifest itself as the (4 × 4) one in the RHEED patterns. A model of the c (8 × 8) structure formation has been built on the basis of the STM data. Origin of the high-order structure on the Si(001) surface and its connection with the epinucleation phenomenon are discussed. PACS 68.35.B-·68.37.Ef·68.49.Jk·68.47.Fg
ISSN:1556-276X
1931-7573
1556-276X
DOI:10.1186/1556-276X-6-218