Highly passivated TOPCon bottom cells for perovskite/silicon tandem solar cells

• Published in: Nature communications 2024-09, Vol.15 (1), p.8453-11, Article 8453
• Main Authors: Ding, Zetao, Kan, Chenxia, Jiang, Shengguo, Zhang, Meili, Zhang, Hongyu, Liu, Wei, Liao, Mingdun, Yang, Zhenhai, Hang, Pengjie, Zeng, Yuheng, Yu, Xuegong, Ye, Jichun
• Format: Article
• Language: English
• Subjects: 132/122; 140/146; 147/135; 147/137; 147/138; 147/143; 147/28; 639/301/299/946; 639/4077/909/4101/4096; 639/925/357/551; Aluminum; Aluminum oxide; Blending effects; Boron; Commercialization; Cost effectiveness; Efficiency; Fabrication; Humanities and Social Sciences; Mass production; multidisciplinary; Open circuit voltage; Oxidation; Perovskites; Photovoltaic cells; Photovoltaics; Polysilicon; Science; Science (multidisciplinary); Silicon; Silicon oxide; Silicon oxides; Solar cells
• ISSN: 2041-1723; 2041-1723
• DOI: 10.1038/s41467-024-52309-2

Tunnel oxide passivated contact (TOPCon) silicon solar cells are rising as a competitive photovoltaic technology, seamlessly blending high efficiency with cost-effectiveness and mass production capabilities. However, the numerous defects from the fragile silicon oxide/c-Si interface and the low field-effect passivation due to the inadequate boron in-diffusion in p-type polycrystalline silicon (poly-Si) passivated contact reduce their open-circuit voltages ( V OC s), impeding their widespread application in the promising perovskite/silicon tandem solar cells (TSCs) that hold a potential to break 30% module efficiency. To address this, we have developed a highly passivated p-type TOPCon structure by optimizing the oxidation conditions, boron in-diffusion, and aluminium oxide hydrogenation, thus pronouncedly improving the implied V OC ( iV OC ) of symmetric samples with p-type TOPCon structures on both sides to 715 mV and the V OC of completed double-sided TOPCon bottom cells to 710 mV. Consequently, integrating with perovskite top cells, our proof of concept of 1 cm 2 n-i-p perovskite/silicon TSCs exhibit V OC s exceeding 1.9 V and a high efficiency of 28.20% (certified 27.3%), which paves a way for TOPCon cells in the commercialization of future tandems. Perovskite/silicon tandem solar cells have attracted great attention for their efficiency and industry-compatible fabrication. Here, authors report a p-type tunnel oxide passivated contact structure with improved implied open-circuit voltage, achieving efficiency over 28% in 1 cm 2 n-i-p tandem cells.