Enhanced Light Extraction Efficiency and Modulation Bandwidth of Deep-Ultraviolet Light-Emitting Diodes with Al Nanospheres

Planar, nanopillar and Al nanosphere structure AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) were numerically investigated via a three-dimensional finite difference time domain (3D FDTD) method. The three types of DUV-LEDs were compared and analyzed in terms of light extraction effic...

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Bibliographic Details
Published in:Crystals (Basel) 2022-02, Vol.12 (2), p.289
Main Authors: Hu, Xiaolong, Liang, Xu, Tang, Lingyun, Liu, Wenjie
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Bandwidths
Diameters
DUV-LEDs
Efficiency
Light emitting diodes
light extraction efficiency
localized surfaced plasmon
Modulation
modulation bandwidth
Nanoparticles
Nanospheres
Simulation
Spectrum allocation
Time domain analysis
Ultraviolet radiation
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Summary:Planar, nanopillar and Al nanosphere structure AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) were numerically investigated via a three-dimensional finite difference time domain (3D FDTD) method. The three types of DUV-LEDs were compared and analyzed in terms of light extraction efficiency (LEE), Purcell factor (FP) and modulation bandwidth. The results showed that nanopillar structure DUV-LEDs with optimal nanopillar height, width and spacing can enhance transverse electric (TE)-polarized LEE to 39.7% and transverse magnetic (TM)-polarized LEE to 4.4%. The remarkable improvement was mainly due to the increased scattering effect, decreased absorption of the p-GaN layer and total internal reflection (TIR) effect. After adopting the Al nanospheres, the TE-polarized modulation bandwidth was increased by 71 MHz and the TM-polarized LEE was enhanced approximately 4.3-fold as compared to the nanopillar LED structure, while the Al nanosphere diameter was 120 nm. The reasons for promotion are mainly attributed to the coupling behavior of diploe and localized surface plasmon induced by Al nanospheres. The designed structures provide a meaningful solution for realization of high-efficiency DUV-LEDs.
ISSN:2073-4352
2073-4352
DOI:10.3390/cryst12020289