Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon

Auger electron spectroscopy combined with ion etching was used to study the effect of ion doping on the distribution profiles of atoms in silicon in contact with its surface. It has been established that preliminary implantation of Ba + ions with E 0 =0.5-1 keV leads to a sharp decrease (by a factor...

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Bibliographic Details
Published in:E3S Web of Conferences 2023-01, Vol.383, p.4041
Main Authors: Donaev, S.B., Shirinov, G.M., Ergasheva, S., Rakhimov, A.M., Wang, Shenghao, Abduvayitov, A.A.
Format: Article
Language:English
Subjects:
Diffusion length
Etching
Ion etching
Ion implantation
Nickel
Silicon
Spectroscopy
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Summary:Auger electron spectroscopy combined with ion etching was used to study the effect of ion doping on the distribution profiles of atoms in silicon in contact with its surface. It has been established that preliminary implantation of Ba + ions with E 0 =0.5-1 keV leads to a sharp decrease (by a factor of 10-12) in the diffusion length of oxygen and nickel atoms.
ISSN:2267-1242
2555-0403
2267-1242
DOI:10.1051/e3sconf/202338304041