Investigating optical properties of Cr:GaN system for various Cr concentrations (A DFT + U study)

We study electronic and optical properties of zincblende GaN doped with various Cr concentrations (3.12%, 6.25%, 9.37%). We conduct the calculations by employing DFT + U in Wien2K code while supercell size (1 × 2 × 2) is kept fixed for all cases. Electronic properties are changed with effect of dopa...

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Bibliographic Details
Published in:Materials research express 2020-05, Vol.7 (5), p.55904
Main Authors: Khan, M Junaid Iqbal, Liu, Juan, Kanwal, Zarfishan, Khan, Muhammad Ismail, Usmani, M Nauman, Khalid, Ata Ur Rahman
Format: Article
Language:English
Subjects:
Absorption spectra
Blue shift
Cr doping
Density functional theory
density of states (DOS)
DFT + U calculations
Dopants
gallium nitride
Gallium nitrides
Optical properties
Optoelectronic devices
Refractivity
Zincblende
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Summary:We study electronic and optical properties of zincblende GaN doped with various Cr concentrations (3.12%, 6.25%, 9.37%). We conduct the calculations by employing DFT + U in Wien2K code while supercell size (1 × 2 × 2) is kept fixed for all cases. Electronic properties are changed with effect of dopant where 3d levels of dopant and 2p level of N produce p-d hybridization and this hybridization is highly affected by increasing impurity contents. Absorption spectra are blue shifted upon increase in dopant contents and absorption peaks are more pronounced in UV region. Refractive index and dielectric constant shows decrease as Cr concentration increases. Results reported in study indicate that Cr:GaN material may be considered a potential candidate for fabrication of optoelectronic, photonic and spintronic devices.
ISSN:2053-1591
2053-1591
DOI:10.1088/2053-1591/ab79cf