Modeling Signal-to-Noise Ratio of CMOS Image Sensors with a Stochastic Approach under Non-Stationary Conditions

A stochastic model for characterizing the conversion gain of Active Pixel Complementary metal–oxide–semiconductor (CMOS) image sensors (APS), assuming stationary conditions was recently presented in this journal. In this study, we extend the stochastic approach to non-stationary conditions. Non-stat...

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Bibliographic Details
Published in:Sensors (Basel, Switzerland) Switzerland), 2023-08, Vol.23 (17), p.7344
Main Authors: Cherniak, Gil, Nemirovsky, Jonathan, Nemirovsky, Amikam, Nemirovsky, Yael
Format: Article
Language:English
Subjects:
Cameras
CMOS image sensor
Communication
Complementary metal oxide semiconductors
Consumer electronics
Electronics industry
gated imaging
Imaging systems
Lasers
Light
Random variables
Sensors
Signal to noise ratio
signal-to-noise ratio (SNR)
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Summary:A stochastic model for characterizing the conversion gain of Active Pixel Complementary metal–oxide–semiconductor (CMOS) image sensors (APS), assuming stationary conditions was recently presented in this journal. In this study, we extend the stochastic approach to non-stationary conditions. Non-stationary conditions occur in gated imaging applications. This new stochastic model, which is based on fundamental physical considerations, enlightens us with new insights into gated CMOS imaging, regardless of the sensor. The Signal-to-Noise Ratio (SNR) is simulated, allowing optimized performance. The conversion gain should be determined under stationary conditions.
ISSN:1424-8220
1424-8220
DOI:10.3390/s23177344