Tailoring ultrabroadband near‐infrared luminescence in Bi-doped germanosilicate glasses

• Published in: Scientific reports 2023-12, Vol.13 (1), p.22852-22852, Article 22852
• Main Authors: Mehaboob, A., Fuertes, V., Rivera, V. A. G., Messaddeq, Y.
• Format: Article
• Language: English
• Subjects: 639/301/1019; 639/301/1023/218; 639/624; 639/624/1075/187; Emissions; Humanities and Social Sciences; Ions; Luminescence; multidisciplinary; Oxidation; Science; Science (multidisciplinary); Silica; Silicon dioxide; Spectrum analysis; Temperature; Wave division multiplexing; Wavelengths
• ISSN: 2045-2322; 2045-2322
• DOI: 10.1038/s41598-023-49898-1

Bi-doped glasses and optical fibers are extensively studied since they present broadband optical amplification in the near-infrared region (NIR), in which the optical telecommunication industry greatly depends for the transmission of optical signals. There are many scientific challenges about the NIR luminescent emissions from Bi ions, such as understanding its origin and further improving the associated optical amplification capacity. In this work, Bi-doped germanosilicate glass compositions with ultrabroadband NIR luminescence were fabricated, in the range of 925–1630 nm, which covers O, E, S, C, and L-telecommunication bands. An in-depth analysis of the impact of modifying excitation wavelengths, Bi content, and GeO 2 /SiO 2 concentration ratio in the glass matrix demonstrates the possibility of considerably manipulating the Bi NIR luminescence, in terms of tuning emission parameters such as bandwidth, up to ~ 490 nm, and luminescence intensity. Based on theoretical and experimental luminescence data retrieved from the fabricated glasses, we demonstrate that the origin of broadband luminescence under all the considered excitation wavelengths can be ascribed to optical transitions of Bi 0 ions. Therefore, an energy level diagram for Bi 0 is proposed. We anticipate that our findings can provide clarifications to the existing uncertainty in the origin of Bi NIR emission, which will be useful to fabricate efficient future optical fiber amplifiers.