Performance Improvement of Residue-Free Graphene Field-Effect Transistor Using Au-Assisted Transfer Method

We report a novel graphene transfer technique for fabricating graphene field-effect transistors (FETs) that avoids detrimental organic contamination on a graphene surface. Instead of using an organic supporting film like poly(methyl methacrylate) (PMMA) for graphene transfer, Au film is directly dep...

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Bibliographic Details
Published in:Sensors (Basel, Switzerland) Switzerland), 2021-10, Vol.21 (21), p.7262
Main Authors: Jang, Yamujin, Seo, Young-Min, Jang, Hyeon-Sik, Heo, Keun, Whang, Dongmok
Format: Article
Language:English
Subjects:
Carbon
Chemical vapor deposition
Communication
Contaminants
Electrical properties
electrical property
Field effect transistors
field-effect transistor
Graphene
graphene transfer
Iodine
Methods
Microscopy
Plasma etching
Residues
Semiconductor devices
Spectrum analysis
Transistors
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Summary:We report a novel graphene transfer technique for fabricating graphene field-effect transistors (FETs) that avoids detrimental organic contamination on a graphene surface. Instead of using an organic supporting film like poly(methyl methacrylate) (PMMA) for graphene transfer, Au film is directly deposited on the as-grown graphene substrate. Graphene FETs fabricated using the established organic film transfer method are easily contaminated by organic residues, while Au film protects graphene channels from these contaminants. In addition, this method can also simplify the device fabrication process, as the Au film acts as an electrode. We successfully fabricated graphene FETs with a clean surface and improved electrical properties using this Au-assisted transfer method.
ISSN:1424-8220
1424-8220
DOI:10.3390/s21217262