A three-terminal non-volatile ferroelectric switch with an insulator–metal transition channel

Ferroelectrics offer a promising material platform to realize energy-efficient non-volatile memory technology with the FeFET-based implementations being one of the most area-efficient ferroelectric memory architectures. However, the FeFET operation entails a fundamental trade-off between the read an...

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Bibliographic Details
Published in:Scientific reports 2022-02, Vol.12 (1), p.2199-2199, Article 2199
Main Authors: Vaidya, Jaykumar, Kanthi, R. S. Surya, Alam, Shamiul, Amin, Nazmul, Aziz, Ahmedullah, Shukla, Nikhil
Format: Article
Language:English
Subjects:
639/166/987
639/766/1130
Energy efficiency
Humanities and Social Sciences
multidisciplinary
Phase transitions
Science
Science (multidisciplinary)
Voltage
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Summary:Ferroelectrics offer a promising material platform to realize energy-efficient non-volatile memory technology with the FeFET-based implementations being one of the most area-efficient ferroelectric memory architectures. However, the FeFET operation entails a fundamental trade-off between the read and the program operations. To overcome this trade-off, we propose in this work, a novel device concept, Mott-FeFET, that aims to replace the Silicon channel of the FeFET with VO 2 - a material that exhibits an electrically driven insulator–metal phase transition. The Mott-FeFET design, which demonstrates a (ferroelectric) polarization-dependent threshold voltage, enables the read current distinguishability (i.e., the ratio of current sensed when the Mott-FeFET is in state 1 and 0, respectively) to be independent of the program voltage. This enables the device to be programmed at low voltages without affecting the ability to sense/read the state of the device. Our work provides a pathway to realize low-voltage and energy-efficient non-volatile memory solutions.
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-021-03560-w